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MJE3521 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MJE3521
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 40 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 40 V
   Tensión emisor-base (Veb): 4 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: TO126

 Búsqueda de reemplazo de transistor bipolar MJE3521

 

MJE3521 Datasheet (PDF)

 9.1. Size:124K  motorola
mje350re.pdf

MJE3521
MJE3521

Order this documentMOTOROLAby MJE350/DSEMICONDUCTOR TECHNICAL DATAMJE350Plastic Medium Power PNP0.5 AMPERESilicon TransistorPOWER TRANSISTORPNP SILICON. . . designed for use in lineoperated applications such as low power, lineoperated300 VOLTSseries pass and switching regulators requiring PNP capability.20 WATTS High CollectorEmitter Sustaining Voltage

 9.2. Size:594K  st
mje340 mje350.pdf

MJE3521
MJE3521

MJE340MJE350Complementary silicon power transistorsFeatures STMicroelectronics preferred salestypes Complementary NPN - PNP devicesApplications Linear and switching industrial equipment321DescriptionSOT-32The MJE340 is a silicon planar NPN transistor intended for use in medium power linear and switching applications. It is mounted in SOT-32.The complemen

 9.3. Size:66K  st
mje340-mje350.pdf

MJE3521
MJE3521

MJE340MJE350COMPLEMETARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICESAPPLICATIONS LINEAR AND SWITCHING INDUSTRIALEQUIPMENTDESCRIPTIONThe MJE340 is a silicon epitaxial planar NPN12transistor intended for use in medium power3linear and switching applications.It is mounted inSOT-32.The complementary PNP type is MJE350. S

 9.4. Size:36K  fairchild semi
mje350.pdf

MJE3521
MJE3521

MJE350High Voltage General Purpose Applications High Collector-Emitter Breakdown Voltage Suitable for Transformer Complement to MJE340TO-12611. Emitter 2.Collector 3.Base..PNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage - 300 V VCEO Collector-Emitter Voltage - 300 V

 9.5. Size:139K  onsemi
mje350g.pdf

MJE3521
MJE3521

MJE350GPlastic Medium-PowerPNP Silicon TransistorThis device is designed for use in line-operated applications such aslow power, line-operated series pass and switching regulatorsrequiring PNP capability.www.onsemi.comFeatures High Collector-Emitter Sustaining Voltage0.5 AMPERE Excellent DC Current GainPOWER TRANSISTOR Complement to MJE340PNP SILICON Thes

 9.6. Size:155K  onsemi
mje350.pdf

MJE3521
MJE3521

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.7. Size:204K  cdil
mje350.pdf

MJE3521
MJE3521

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP EPITAXIAL SILICON POWER TRANSISTOR MJE350TO126 Plastic PackageECBDesigned for use in Line-Operated Applications sush as Low Power, Line- Operated SeriesPass and Switching Regulators ABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITCollector -Emitter Voltage VCEO 300 VCollec

 9.8. Size:212K  inchange semiconductor
mje350.pdf

MJE3521
MJE3521

isc Silicon PNP Power Transistor MJE350DESCRIPTIONCollectorEmitter Sustaining Voltage-: V =CEO(SUS) -300 V(Min)DC Current Gain-: h = -100(Min) @ I = -50mAFE CLow Collector Saturation Voltage-: V = -1.0V(Max.)@ I = -50mACE(sat) CComplement to the NPN MJE340Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDes

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