MJE5170 Datasheet, Equivalent, Cross Reference Search
Type Designator: MJE5170
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 65 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO220
MJE5170 Transistor Equivalent Substitute - Cross-Reference Search
MJE5170 Datasheet (PDF)
mje5170 mje5171 mje5172.pdf
isc Silicon PNP Power Transistors MJE5170/5171/5172DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -120V(Min)- MJE5170CEO(SUS)= -140V(Min)- MJE5171= -160V(Min)- MJE5172Low Saturation VoltageComplement to the NPN MJE5180/5181/5182Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose
mje51t.pdf
isc Silicon NPN Power Transistor MJE51TDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 250V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage inverters, switching regulatorsand line operated amplifier applications. Especially wellsuited for switching power supply applicationsABSOLU
mje5180 mje5181 mje5182.pdf
isc Silicon NPN Power Transistors MJE5180/5181/5182DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 120V(Min)- MJE5180CEO(SUS)= 140V(Min)- MJE5181= 160V(Min)- MJE5182Low Saturation VoltageComplement to Type MJE5170/5171/5172Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose ampli
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
