All Transistors. MJE702 Datasheet

 

MJE702 Datasheet, Equivalent, Cross Reference Search


   Type Designator: MJE702
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 750
   Noise Figure, dB: -
   Package: TO126

 MJE702 Transistor Equivalent Substitute - Cross-Reference Search

   

MJE702 Datasheet (PDF)

 0.1. Size:126K  onsemi
mje702g.pdf

MJE702
MJE702

MJE700, MJE702, MJE703(PNP) - MJE800, MJE802,MJE803 (NPN)Plastic DarlingtonComplementary Siliconhttp://onsemi.comPower TransistorsThese devices are designed for general-purpose amplifier and4.0 AMPERElow-speed switching applications.DARLINGTON POWERFeaturesTRANSISTORS High DC Current Gain - hFE = 2000 (Typ) @ IC COMPLEMENTARY SILICON= 2.0 Adc40 WATT Monolit

 0.2. Size:235K  inchange semiconductor
mje702t.pdf

MJE702
MJE702

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor MJE702T DESCRIPTION CollectorEmitter Breakdown Voltage : V(BR)CEO =-80 V DC Current Gain : hFE = 750(Min) @ IC=-2A Complement to Type MJE802T APPLICATIONS Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25)

 9.1. Size:256K  motorola
mje700re.pdf

MJE702
MJE702

Order this documentMOTOROLAby MJE700/DSEMICONDUCTOR TECHNICAL DATAPNPMJE700,TPlastic DarlingtonComplementary Silicon PowerMJE702TransistorsMJE703. . . designed for general purpo

 9.2. Size:51K  fairchild semi
mje700.pdf

MJE702
MJE702

MJE700/701/702/703Monolithic Construction With Built-in Base-Emitter Resistors High DC Current Gain : hFE= 750 (Min.) @ IC= -1.5 and -2.0A DC Complement to MJE800/801/802/803TO-12611. Emitter 2.Collector 3.BasePNP Epitaxial Silicon Darlington TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedEquivalent CircuitCSym- UnitParameter Valuebol s VCB

 9.3. Size:126K  onsemi
mje703g.pdf

MJE702
MJE702

MJE700, MJE702, MJE703(PNP) - MJE800, MJE802,MJE803 (NPN)Plastic DarlingtonComplementary Siliconhttp://onsemi.comPower TransistorsThese devices are designed for general-purpose amplifier and4.0 AMPERElow-speed switching applications.DARLINGTON POWERFeaturesTRANSISTORS High DC Current Gain - hFE = 2000 (Typ) @ IC COMPLEMENTARY SILICON= 2.0 Adc40 WATT Monolit

 9.4. Size:126K  onsemi
mje700g.pdf

MJE702
MJE702

MJE700, MJE702, MJE703(PNP) - MJE800, MJE802,MJE803 (NPN)Plastic DarlingtonComplementary Siliconhttp://onsemi.comPower TransistorsThese devices are designed for general-purpose amplifier and4.0 AMPERElow-speed switching applications.DARLINGTON POWERFeaturesTRANSISTORS High DC Current Gain - hFE = 2000 (Typ) @ IC COMPLEMENTARY SILICON= 2.0 Adc40 WATT Monolit

 9.5. Size:228K  inchange semiconductor
mje700.pdf

MJE702
MJE702

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor MJE700 DESCRIPTION CollectorEmitter Breakdown Voltage : V(BR)CEO =-60 V DC Current Gain : hFE = 750(Min) @ IC=-1.5 A Complement to Type MJE800 APPLICATIONS Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25

 9.6. Size:211K  inchange semiconductor
mje701.pdf

MJE702
MJE702

isc Silicon PNP Darlington Power Transistor MJE701DESCRIPTIONCollectorEmitter Breakdown Voltage: V = -60 V(BR)CEODC Current Gain: h = 750(Min) @ I = -2 AFE C= 100(Min) @ I = -4ACComplement to Type MJE801Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and low-speed

 9.7. Size:215K  inchange semiconductor
mje703t.pdf

MJE702
MJE702

isc Silicon PNP Darlington Power Transistor MJE703TDESCRIPTIONCollectorEmitter Breakdown Voltage: V = -80 V(BR)CEODC Current Gain: h = 750(Min) @ I = -2 AFE C= 100(Min) @ I = -4ACComplement to Type MJE803TMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and low-speed

 9.8. Size:215K  inchange semiconductor
mje701t.pdf

MJE702
MJE702

isc Silicon PNP Darlington Power Transistor MJE701TDESCRIPTIONCollectorEmitter Breakdown Voltage: V = -60 V(BR)CEODC Current Gain: h = 750(Min) @ I = -2 AFE C= 100(Min) @ I = -4ACComplement to Type MJE801TMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and low-speed

 9.9. Size:213K  inchange semiconductor
mje703.pdf

MJE702
MJE702

isc Silicon PNP Darlington Power Transistor MJE703DESCRIPTIONCollectorEmitter Breakdown Voltage: V = -80 V(BR)CEODC Current Gain: h = 750(Min) @ I = -2 AFE C= 100(Min) @ I = -4ACComplement to Type MJE803Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and low-speed

 9.10. Size:215K  inchange semiconductor
mje700t.pdf

MJE702
MJE702

isc Silicon PNP Darlington Power Transistor MJE700TDESCRIPTIONCollectorEmitter Breakdown Voltage: V = -60 V(BR)CEODC Current Gain: h = 750(Min) @ I = -1.5 AFE C= 100(Min) @ I = -4ACComplement to Type MJE800TMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and low-spe

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , C3198 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
Back to Top