MJE8501 Specs and Replacement

Type Designator: MJE8501

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 65 W

Maximum Collector-Base Voltage |Vcb|: 1400 V

Maximum Collector-Emitter Voltage |Vce|: 800 V

Maximum Emitter-Base Voltage |Veb|: 8 V

Maximum Collector Current |Ic max|: 2.5 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Collector Capacitance (Cc): 200 pF

Forward Current Transfer Ratio (hFE), MIN: 7.5

Noise Figure, dB: -

Package: TO220

 MJE8501 Substitution

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MJE8501 datasheet

 ..1. Size:211K  inchange semiconductor

 mje8501.pdf pdf_icon

MJE8501

isc Silicon NPN Power Transistor MJE8501 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line... See More ⇒

 8.1. Size:89K  motorola

 mje8503a.pdf pdf_icon

MJE8501

Order this document MOTOROLA by MJE8503A/D SEMICONDUCTOR TECHNICAL DATA * MJE8503A Advance Information *Motorola Preferred Device SWITCHMODE Series NPN Bipolar Power Transistor POWER TRANSISTORS The MJE8503A transistor is designed for high voltage, high speed, power switching 5.0 AMPERES in inductive circuits where fall time is critical. They are suited for line operated 1500 V... See More ⇒

 8.2. Size:211K  inchange semiconductor

 mje8503.pdf pdf_icon

MJE8501

isc Silicon NPN Power Transistor MJE8503 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line... See More ⇒

 8.3. Size:211K  inchange semiconductor

 mje8502.pdf pdf_icon

MJE8501

isc Silicon NPN Power Transistor MJE8502 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line... See More ⇒

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Detailed specifications: MJE800T, MJE801, MJE801T, MJE802, MJE802T, MJE803, MJE803T, MJE8500, 2SD718, MJE8502, MJE8503, MJE9780, MJF10012, MJF122, MJF127, MJF13007, MJF15030

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