MJE8501 datasheet, аналоги, основные параметры

Наименование производителя: MJE8501  📄📄 

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 65 W

Макcимально допустимое напряжение коллектор-база (Ucb): 1400 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 800 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 8 V

Макcимальный постоянный ток коллектора (Ic): 2.5 A

Предельная температура PN-перехода (Tj): 125 °C

Электрические характеристики

Ёмкость коллекторного перехода (Cc): 200 pf

Статический коэффициент передачи тока (hFE): 7.5

Корпус транзистора: TO220

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MJE8501 даташит

 ..1. Size:211K  inchange semiconductor
 mje8501.pdf pdf_icon

MJE8501

isc Silicon NPN Power Transistor MJE8501 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line

 8.1. Size:89K  motorola
 mje8503a.pdf pdf_icon

MJE8501

Order this document MOTOROLA by MJE8503A/D SEMICONDUCTOR TECHNICAL DATA * MJE8503A Advance Information *Motorola Preferred Device SWITCHMODE Series NPN Bipolar Power Transistor POWER TRANSISTORS The MJE8503A transistor is designed for high voltage, high speed, power switching 5.0 AMPERES in inductive circuits where fall time is critical. They are suited for line operated 1500 V

 8.2. Size:211K  inchange semiconductor
 mje8503.pdf pdf_icon

MJE8501

isc Silicon NPN Power Transistor MJE8503 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line

 8.3. Size:211K  inchange semiconductor
 mje8502.pdf pdf_icon

MJE8501

isc Silicon NPN Power Transistor MJE8502 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line

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Другие транзисторы: MJE800T, MJE801, MJE801T, MJE802, MJE802T, MJE803, MJE803T, MJE8500, 2SD718, MJE8502, MJE8503, MJE9780, MJF10012, MJF122, MJF127, MJF13007, MJF15030