All Transistors. MJE8502 Datasheet

 

MJE8502 Datasheet and Replacement


   Type Designator: MJE8502
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 80 W
   Maximum Collector-Base Voltage |Vcb|: 1200 V
   Maximum Collector-Emitter Voltage |Vce|: 700 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Collector Capacitance (Cc): 300 pF
   Forward Current Transfer Ratio (hFE), MIN: 7.5
   Noise Figure, dB: -
   Package: TO220
 

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MJE8502 Datasheet (PDF)

 ..1. Size:211K  inchange semiconductor
 mje8502.pdf pdf_icon

MJE8502

isc Silicon NPN Power Transistor MJE8502DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for line

 8.1. Size:89K  motorola
 mje8503a.pdf pdf_icon

MJE8502

Order this documentMOTOROLAby MJE8503A/DSEMICONDUCTOR TECHNICAL DATA*MJE8503AAdvance Information*Motorola Preferred DeviceSWITCHMODE SeriesNPN Bipolar Power TransistorPOWER TRANSISTORSThe MJE8503A transistor is designed for high voltage, high speed, power switching5.0 AMPERESin inductive circuits where fall time is critical. They are suited for line operated1500 V

 8.2. Size:211K  inchange semiconductor
 mje8501.pdf pdf_icon

MJE8502

isc Silicon NPN Power Transistor MJE8501DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for line

 8.3. Size:211K  inchange semiconductor
 mje8503.pdf pdf_icon

MJE8502

isc Silicon NPN Power Transistor MJE8503DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for line

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Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BF423A3 | 2SC1762-2 | 2DA1774Q | NB121HH | MJE2361T | NB014F | NB013FK

Keywords - MJE8502 transistor datasheet

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