MJF122 Datasheet. Specs and Replacement
Type Designator: MJF122 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Collector Capacitance (Cc): 200 pF
Forward Current Transfer Ratio (hFE), MIN: 2
Package: TO220F
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MJF122 Substitution
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MJF122 datasheet
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJF122 DESCRIPTION With TO-220F package DARLINGTON High DC current gain Low collector saturation voltage Complement to type MJF127 APPLICATIONS Designed for general purpose amplifier and switching applications. PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter ABSOLUTE MAXI... See More ⇒
MJF122, MJF127 Complementary Power Darlingtons For Isolated Package Applications Designed for general-purpose amplifiers and switching http //onsemi.com applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis. COMPLEMENTARY SILICON Features POWER DARLINGTONS Electrically Similar to the Popular TIP122 and TIP127 ... See More ⇒
Detailed specifications: MJE803, MJE803T, MJE8500, MJE8501, MJE8502, MJE8503, MJE9780, MJF10012, BC327, MJF127, MJF13007, MJF15030, MJF15031, MJF16002, MJF16006A, MJF16010A, MJF16204
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