MJF3055
Datasheet, Equivalent, Cross Reference Search
Type Designator: MJF3055
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30
W
Maximum Collector-Base Voltage |Vcb|: 90
V
Maximum Collector-Emitter Voltage |Vce|: 90
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 10
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 2
MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package:
TO220F
MJF3055
Transistor Equivalent Substitute - Cross-Reference Search
MJF3055
Datasheet (PDF)
..1. Size:156K motorola
mjf3055 mjf2955.pdf
Order this documentMOTOROLAby MJF3055/DSEMICONDUCTOR TECHNICAL DATANPNMJF3055ComplementaryPNPMJF2955Silicon Power Transistors. . . specifically designed for general purpose amplifier and switching applications. Isolated Overmold Package (1500 Volts RMS Min) Electrically Similar to the Popular MJE3055T and MJE2955T COMPLEMENTARY CollectorEmitter Sustaining V
..2. Size:183K onsemi
mjf3055 mjf2955.pdf
MJF3055 (NPN),MJF2955 (PNP)ComplementarySilicon Power TransistorsSpecifically designed for general purpose amplifier and switchingapplications.http://onsemi.comFeaturesCOMPLEMENTARY SILICON Isolated Overmold Package (1500 Volts RMS Min) Electrically Similar to the Popular MJE3055T and MJE2955TPOWER TRANSISTORS Collector-Emitter Sustaining Voltage - VCEO(sus) 90
0.1. Size:115K onsemi
mjf3055g.pdf
MJF3055 (NPN),MJF2955 (PNP)ComplementarySilicon Power TransistorsSpecifically designed for general purpose amplifier and switchingapplications.http://onsemi.comFeaturesCOMPLEMENTARY SILICON Isolated Overmold Package (1500 Volts RMS Min) Electrically Similar to the Popular MJE3055T and MJE2955TPOWER TRANSISTORS Collector-Emitter Sustaining Voltage - VCEO(sus) 90
Datasheet: 2SA1803O
, 2SA1803R
, 2SA1804
, 2SA1804O
, 2SA1804R
, 2SA1805
, 2SA1805O
, 2SA1805R
, TIP42
, 2SA181
, 2SA1810
, 2SA1810B
, 2SA1810C
, 2SA1811
, 2SA1815
, 2SA1815-3
, 2SA1815-4
.