MJF6388
Datasheet, Equivalent, Cross Reference Search
Type Designator: MJF6388
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 40
W
Maximum Collector-Base Voltage |Vcb|: 100
V
Maximum Collector-Emitter Voltage |Vce|: 100
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 10
A
Max. Operating Junction Temperature (Tj): 150
°C
Collector Capacitance (Cc): 200
pF
Forward Current Transfer Ratio (hFE), MIN: 3
Noise Figure, dB: -
Package:
TO220F
MJF6388
Transistor Equivalent Substitute - Cross-Reference Search
MJF6388
Datasheet (PDF)
0.1. Size:338K motorola
mjf6388r mjf6668.pdf
Order this documentMOTOROLAby MJF6388/DSEMICONDUCTOR TECHNICAL DATANPNMJF6388*Complementary PowerPNPMJF6668*DarlingtonsFor Isolated Package Applications*Motorola Preferred DevicesDesigned for generalpurpose amplifiers and switching applications, where theCOMPLEMENTARYmounting surface of the device is required to be electrically isolated from the heatsinkSILICON
0.2. Size:153K onsemi
mjf6388g.pdf
MJF6388 (NPN),MJF6668 (PNP)Preferred Device Complementary PowerDarlingtonsFor Isolated Package ApplicationsDesigned for general-purpose amplifiers and switchinghttp://onsemi.comapplications, where the mounting surface of the device is required tobe electrically isolated from the heatsink or chassis.COMPLEMENTARY SILICONFeaturesPOWER DARLINGTONS Isolated Overmold Pac
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