MJF6388 Datasheet. Specs and Replacement

Type Designator: MJF6388  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 200 pF

Forward Current Transfer Ratio (hFE), MIN: 3

Noise Figure, dB: -

Package: TO220F

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MJF6388 datasheet

 0.1. Size:338K  motorola

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MJF6388

Order this document MOTOROLA by MJF6388/D SEMICONDUCTOR TECHNICAL DATA NPN MJF6388* Complementary Power PNP MJF6668* Darlingtons For Isolated Package Applications *Motorola Preferred Devices Designed for general purpose amplifiers and switching applications, where the COMPLEMENTARY mounting surface of the device is required to be electrically isolated from the heatsink SILICON ... See More ⇒

 0.2. Size:153K  onsemi

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MJF6388

MJF6388 (NPN), MJF6668 (PNP) Preferred Device Complementary Power Darlingtons For Isolated Package Applications Designed for general-purpose amplifiers and switching http //onsemi.com applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis. COMPLEMENTARY SILICON Features POWER DARLINGTONS Isolated Overmold Pac... See More ⇒

Detailed specifications: MJF18002, MJF18004, MJF18006, MJF18008, MJF2955, MJF3055, MJF47, MJF6107, SS8050, MJF6688, MJH10012, MJH11017, MJH11018, MJH11019, MJH11020, MJH11021, MJH11022

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