MJF6688 Specs and Replacement
Type Designator: MJF6688
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Collector Capacitance (Cc): 300 pF
Forward Current Transfer Ratio (hFE), MIN: 3
Noise Figure, dB: -
Package: TO220F
MJF6688 Substitution
MJF6688 datasheet
mjf6388r mjf6668.pdf
Order this document MOTOROLA by MJF6388/D SEMICONDUCTOR TECHNICAL DATA NPN MJF6388* Complementary Power PNP MJF6668* Darlingtons For Isolated Package Applications *Motorola Preferred Devices Designed for general purpose amplifiers and switching applications, where the COMPLEMENTARY mounting surface of the device is required to be electrically isolated from the heatsink SILICON ... See More ⇒
mjf6668g.pdf
MJF6388 (NPN), MJF6668 (PNP) Preferred Device Complementary Power Darlingtons For Isolated Package Applications Designed for general-purpose amplifiers and switching http //onsemi.com applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis. COMPLEMENTARY SILICON Features POWER DARLINGTONS Isolated Overmold Pac... See More ⇒
mjf6668.pdf
MJF6388 (NPN), MJF6668 (PNP) Preferred Device Complementary Power Darlingtons For Isolated Package Applications Designed for general-purpose amplifiers and switching http //onsemi.com applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis. COMPLEMENTARY SILICON Features POWER DARLINGTONS Isolated Overmold Pac... See More ⇒
Detailed specifications: MJF18004 , MJF18006 , MJF18008 , MJF2955 , MJF3055 , MJF47 , MJF6107 , MJF6388 , 8550 , MJH10012 , MJH11017 , MJH11018 , MJH11019 , MJH11020 , MJH11021 , MJH11022 , MJH12004 .
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