MJF6688 Datasheet, Equivalent, Cross Reference Search
Type Designator: MJF6688
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 300 pF
Forward Current Transfer Ratio (hFE), MIN: 3
Noise Figure, dB: -
Package: TO220F
MJF6688 Transistor Equivalent Substitute - Cross-Reference Search
MJF6688 Datasheet (PDF)
mjf6388r mjf6668.pdf
Order this documentMOTOROLAby MJF6388/DSEMICONDUCTOR TECHNICAL DATANPNMJF6388*Complementary PowerPNPMJF6668*DarlingtonsFor Isolated Package Applications*Motorola Preferred DevicesDesigned for generalpurpose amplifiers and switching applications, where theCOMPLEMENTARYmounting surface of the device is required to be electrically isolated from the heatsinkSILICON
mjf6668g.pdf
MJF6388 (NPN),MJF6668 (PNP)Preferred Device Complementary PowerDarlingtonsFor Isolated Package ApplicationsDesigned for general-purpose amplifiers and switchinghttp://onsemi.comapplications, where the mounting surface of the device is required tobe electrically isolated from the heatsink or chassis.COMPLEMENTARY SILICONFeaturesPOWER DARLINGTONS Isolated Overmold Pac
mjf6668.pdf
MJF6388 (NPN),MJF6668 (PNP)Preferred Device Complementary PowerDarlingtonsFor Isolated Package ApplicationsDesigned for general-purpose amplifiers and switchinghttp://onsemi.comapplications, where the mounting surface of the device is required tobe electrically isolated from the heatsink or chassis.COMPLEMENTARY SILICONFeaturesPOWER DARLINGTONS Isolated Overmold Pac
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
