MJF6688 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJF6688
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 40 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 100 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 10 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 300 pF
Ganancia de corriente contínua (hfe): 3
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de transistor bipolar MJF6688
MJF6688 Datasheet (PDF)
mjf6388r mjf6668.pdf
Order this documentMOTOROLAby MJF6388/DSEMICONDUCTOR TECHNICAL DATANPNMJF6388*Complementary PowerPNPMJF6668*DarlingtonsFor Isolated Package Applications*Motorola Preferred DevicesDesigned for generalpurpose amplifiers and switching applications, where theCOMPLEMENTARYmounting surface of the device is required to be electrically isolated from the heatsinkSILICON
mjf6668g.pdf
MJF6388 (NPN),MJF6668 (PNP)Preferred Device Complementary PowerDarlingtonsFor Isolated Package ApplicationsDesigned for general-purpose amplifiers and switchinghttp://onsemi.comapplications, where the mounting surface of the device is required tobe electrically isolated from the heatsink or chassis.COMPLEMENTARY SILICONFeaturesPOWER DARLINGTONS Isolated Overmold Pac
mjf6668.pdf
MJF6388 (NPN),MJF6668 (PNP)Preferred Device Complementary PowerDarlingtonsFor Isolated Package ApplicationsDesigned for general-purpose amplifiers and switchinghttp://onsemi.comapplications, where the mounting surface of the device is required tobe electrically isolated from the heatsink or chassis.COMPLEMENTARY SILICONFeaturesPOWER DARLINGTONS Isolated Overmold Pac
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: MJE800T | 2SA168A | BC284A
History: MJE800T | 2SA168A | BC284A
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050