MJH11018 Todos los transistores

Order this document MOTOROLA by MJH11017/D SEMICONDUCTOR TECHNICAL DATA MJH10012 (See MJ10012) Complementary Darlington PNP Silicon Power Transistors * MJH11017 . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJH11019* High DC Current Gain @ 10 Adc hFE = 400 Min (All Types) Collector Emitter Sustaining Vo

isc Silicon NPN Darlington Power Transistor MJH11018 DESCRIPTION High DC Current Gain- h = 400(Min)@ I = 10A FE C Collector-Emitter Sustaining Voltage- V = 150V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 2.5V(Max)@ I = 10A CE(sat) C = 4.0V(Max)@ I = 15A C Complement to Type MJH11017 Minimum Lot-to-Lot variations for robust device performance and r

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington http //onsemi.com Silicon Power Transistors These devices are designed for use as general purpose amplifiers, 15 AMPERE DARLINGTON low frequency switching and motor control applications. COMPLEMENTARY SILICON Features POWER TRANSISTORS High DC Current Gain @ 10 Adc hFE = 400 Min (

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington http //onsemi.com Silicon Power Transistors These devices are designed for use as general purpose amplifiers, 15 AMPERE DARLINGTON low frequency switching and motor control applications. COMPLEMENTARY SILICON Features POWER TRANSISTORS High DC Current Gain @ 10 Adc hFE = 400 Min (

isc Silicon PNP Darlington Power Transistor MJH11017 DESCRIPTION High DC Current Gain- h = 400(Min)@ I = -10A FE C Collector-Emitter Sustaining Voltage- V = -150V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = -2.5V(Max)@ I = -10A CE(sat) C = -4.0V(Max)@ I = -15A C Complement to Type MJH11018 Minimum Lot-to-Lot variations for robust device performance