All Transistors. MJH11018 Datasheet

 

MJH11018 Datasheet, Equivalent, Cross Reference Search

Type Designator: MJH11018

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 150 V

Maximum Collector-Emitter Voltage |Vce|: 150 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 3 MHz

Collector Capacitance (Cc): 400 pF

Forward Current Transfer Ratio (hFE), MIN: 400

Noise Figure, dB: -

Package: TO218

MJH11018 Transistor Equivalent Substitute - Cross-Reference Search

 

MJH11018 Datasheet (PDF)

..1. mjh11017 mjh11018 mjh11019 mjh11020 mjh11021 mjh11022.pdf Size:212K _motorola

MJH11018 MJH11018

Order this documentMOTOROLAby MJH11017/DSEMICONDUCTOR TECHNICAL DATAMJH10012(See MJ10012)Complementary DarlingtonPNPSilicon Power Transistors*MJH11017. . . designed for use as g

..2. mjh11018.pdf Size:224K _inchange_semiconductor

MJH11018 MJH11018

isc Silicon NPN Darlington Power Transistor MJH11018DESCRIPTIONHigh DC Current Gain-: h = 400(Min)@ I = 10AFE CCollector-Emitter Sustaining Voltage-: V = 150V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.5V(Max)@ I = 10ACE(sat) C= 4.0V(Max)@ I = 15ACComplement to Type MJH11017Minimum Lot-to-Lot variations for robust deviceperformance and r

7.1. mjh11017g.pdf Size:141K _onsemi

MJH11018 MJH11018

MJH11017, MJH11019,MJH11021 (PNP)MJH11018, MJH11020,MJH11022 (NPN)Complementary Darlingtonhttp://onsemi.comSilicon Power TransistorsThese devices are designed for use as general purpose amplifiers,15 AMPERE DARLINGTONlow frequency switching and motor control applications.COMPLEMENTARY SILICONFeaturesPOWER TRANSISTORS High DC Current Gain @ 10 Adc hFE = 400 Min (

7.2. mjh11019g.pdf Size:141K _onsemi

MJH11018 MJH11018

MJH11017, MJH11019,MJH11021 (PNP)MJH11018, MJH11020,MJH11022 (NPN)Complementary Darlingtonhttp://onsemi.comSilicon Power TransistorsThese devices are designed for use as general purpose amplifiers,15 AMPERE DARLINGTONlow frequency switching and motor control applications.COMPLEMENTARY SILICONFeaturesPOWER TRANSISTORS High DC Current Gain @ 10 Adc hFE = 400 Min (

 7.3. mjh11017.pdf Size:222K _inchange_semiconductor

MJH11018 MJH11018

isc Silicon PNP Darlington Power Transistor MJH11017DESCRIPTIONHigh DC Current Gain-: h = 400(Min)@ I = -10AFE CCollector-Emitter Sustaining Voltage-: V = -150V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = -2.5V(Max)@ I = -10ACE(sat) C= -4.0V(Max)@ I = -15ACComplement to Type MJH11018Minimum Lot-to-Lot variations for robust deviceperformance

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2SB817 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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