MJH11018 Specs and Replacement
Type Designator: MJH11018
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Collector Capacitance (Cc): 400 pF
Forward Current Transfer Ratio (hFE), MIN: 400
Package: TO218
MJH11018 Substitution
- BJT ⓘ Cross-Reference Search
MJH11018 datasheet
mjh11017 mjh11018 mjh11019 mjh11020 mjh11021 mjh11022.pdf 
Order this document MOTOROLA by MJH11017/D SEMICONDUCTOR TECHNICAL DATA MJH10012 (See MJ10012) Complementary Darlington PNP Silicon Power Transistors * MJH11017 . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJH11019* High DC Current Gain @ 10 Adc hFE = 400 Min (All Types) Collector Emitter Sustaining Vo... See More ⇒
isc Silicon NPN Darlington Power Transistor MJH11018 DESCRIPTION High DC Current Gain- h = 400(Min)@ I = 10A FE C Collector-Emitter Sustaining Voltage- V = 150V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 2.5V(Max)@ I = 10A CE(sat) C = 4.0V(Max)@ I = 15A C Complement to Type MJH11017 Minimum Lot-to-Lot variations for robust device performance and r... See More ⇒
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington http //onsemi.com Silicon Power Transistors These devices are designed for use as general purpose amplifiers, 15 AMPERE DARLINGTON low frequency switching and motor control applications. COMPLEMENTARY SILICON Features POWER TRANSISTORS High DC Current Gain @ 10 Adc hFE = 400 Min (... See More ⇒
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington http //onsemi.com Silicon Power Transistors These devices are designed for use as general purpose amplifiers, 15 AMPERE DARLINGTON low frequency switching and motor control applications. COMPLEMENTARY SILICON Features POWER TRANSISTORS High DC Current Gain @ 10 Adc hFE = 400 Min (... See More ⇒
Detailed specifications: MJF2955 , MJF3055 , MJF47 , MJF6107 , MJF6388 , MJF6688 , MJH10012 , MJH11017 , C3198 , MJH11019 , MJH11020 , MJH11021 , MJH11022 , MJH12004 , MJH13090 , MJH13091 , MJH16002 .
History: 2SB1216T-TL-E | 2SB1205S-TL-E
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