MJW16012 Specs and Replacement

Type Designator: MJW16012

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 135 W

Maximum Collector-Base Voltage |Vcb|: 850 V

Maximum Collector-Emitter Voltage |Vce|: 450 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 400 pF

Forward Current Transfer Ratio (hFE), MIN: 5

Noise Figure, dB: -

Package: TO247

 MJW16012 Substitution

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MJW16012 datasheet

 7.1. Size:362K  motorola

 mjw16010.pdf pdf_icon

MJW16012

Order this document MOTOROLA by MJW16010A/D SEMICONDUCTOR TECHNICAL DATA MJW16010A * Designer's Data Sheet *Motorola Preferred Device NPN Silicon Power Transistors POWER TRANSISTORS 1 kV SWITCHMODE Series 15 AMPERES 500 VOLTS These transistors are designed for high voltage, high speed, power switching in 125 AND 175 WATTS inductive circuits where fall time is critical. The... See More ⇒

 7.2. Size:220K  inchange semiconductor

 mjw16010.pdf pdf_icon

MJW16012

isc Silicon NPN Power Transistor MJW16010 DESCRIPTION Low Collector Saturation Voltage Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage, high-speed,power switching in inductive circuits where fall time is critica... See More ⇒

 7.3. Size:219K  inchange semiconductor

 mjw16010a.pdf pdf_icon

MJW16012

isc Silicon NPN Power Transistor MJW16010A DESCRIPTION Low Collector Saturation Voltage Collector-Emitter Sustaining Voltage- V = 500V(Min) CEO(SUS) Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage, high-speed,power switching in inductive circuits where fall time is critic... See More ⇒

 7.4. Size:220K  inchange semiconductor

 mjw16018.pdf pdf_icon

MJW16012

isc Silicon NPN Power Transistor MJW16018 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for lin... See More ⇒

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Detailed specifications: MJH6282, MJH6283, MJH6284, MJH6285, MJH6286, MJH6287, MJW16010, MJW16010A, BC547B, MJW16018, MJW16110, MJW16206, MJW16210, MJW16212, MM1008, MM1139, MM1151

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