MM1153 Datasheet, Equivalent, Cross Reference Search
Type Designator: MM1153
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 100 °C
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 1.2 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO72
MM1153 Transistor Equivalent Substitute - Cross-Reference Search
MM1153 Datasheet (PDF)
9.1. Size:709K way-on
wmm115n15hg4.pdf
wmm115n15hg4.pdf
WMM115N15HG4 150V N-Channel Enhancement Mode Power MOSFET DescriptionWMM115N15HG4 uses Wayon's 4th generation power trench DMOSFET technology that has been especially tailored to minimize the Gon-state resistance and yet maintain superior switching performance. SThis device is well suited for high efficiency fast switching applications. TO-263Features V = 150V, I =
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: 2N783 | 2SD2137A | D42C10
