2N1109 Datasheet and Replacement

   Type Designator: 2N1109
   Material of Transistor: Ge
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.03 W
   Maximum Collector-Base Voltage |Vcb|: 16 V
   Maximum Collector Current |Ic max|: 0.005 A
   Max. Operating Junction Temperature (Tj): 100 °C
   Transition Frequency (ft): 15 MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 11
   Noise Figure, dB: -
   Package: TO22
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