All Transistors. 2N4350 Datasheet

 

2N4350 Datasheet and Replacement


   Type Designator: 2N4350
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 7 W
   Maximum Collector-Base Voltage |Vcb|: 65 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 3.5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 300 MHz
   Collector Capacitance (Cc): 10 pF
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO5
 

 2N4350 Substitution

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2N4350 Datasheet (PDF)

 9.1. Size:18K  calogic
 2n4352.pdf pdf_icon

2N4350

P-Channel Enhancement ModeMOSFET Amplifier/SwitchCORPORATION2N4352FEATURES ABSOLUTE MAXIMUM RATINGS(T = 25oC unless otherwise noted)A Low ON Resistance Low Capacitance Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V High Gain Drain-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V P-Chann

 9.2. Size:217K  linear-systems
 2n4351.pdf pdf_icon

2N4350

2N4351 N-CHANNEL MOSFET Linear Integrated Systems ENHANCEMENT MODE FEATURES DIRECT REPLACEMENT FOR INTERSIL 2N4351 HIGH DRAIN CURRENT ID = 100mA TO-72HIGH GAIN gfs = 1000S BOTTOM VIEWABSOLUTE MAXIMUM RATINGS1 @ 25 C (unless otherwise stated) G 2 3 DMaximum Temperatures Storage Temperature -65 to +200 C Operating Junction Temperature -55 to +150 C 1 4S

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2N907 | 2SA965O | 2N634 | KTC5027 | 2N3640 | LBC558 | 2N5029

Keywords - 2N4350 transistor datasheet

 2N4350 cross reference
 2N4350 equivalent finder
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