All Transistors. MM1501 Datasheet

 

MM1501 Datasheet and Replacement


   Type Designator: MM1501
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 3.5 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 500 MHz
   Collector Capacitance (Cc): 5 pF
   Noise Figure, dB: -
   Package: TO107
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MM1501 Datasheet (PDF)

 9.1. Size:206K  ixys
 vmm1500-0075x2.pdf pdf_icon

MM1501

VMM 1500-0075X2VDSS = 75 VDual PowerID25 = 1560 AMOSFET ModuleRDS(on) = 0.38 mPhaseleg Configuration113103291889 111102FeaturesMOSFET T1 + T2 Trench MOSFETsSymbol Conditions Maximum Ratings - low RDSonVDSS TVJ = 25C to 150C 75 V - optimized intrinsic reverse diodeVGS 20 V package - low inductive current pathID25 TC = 2

 9.2. Size:179K  ixys
 fmm150-0075x2f.pdf pdf_icon

MM1501

Advance Technical InformationTrenchT2TM HiperFET VDSS = 75VFMM150-0075X2FN-Channel Power ID25 = 120A MOSFET RDS(on) 5.8m 33T1trr(typ) = 66ns5544T211Phase Leg TopologyISOPLUS i4-PakTM22Symbol Test Conditions Maximum RatingsTJ -55 ... +175 C 1TJM 175 CIsolated TabTstg -55 ... +175 C5VISOL 50/60HZ, RMS, t

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2N332A | BDW24 | BC847RA | MMBT3906HE3 | 2SB744A | 2N2874 | 2N3524

Keywords - MM1501 transistor datasheet

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