MM1501A Specs and Replacement
Type Designator: MM1501A
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 3.5 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 500 MHz
Collector Capacitance (Cc): 5 pF
Package: TO107
MM1501A Substitution
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MM1501A datasheet
VMM 1500-0075X2 VDSS = 75 V Dual Power ID25 = 1560 A MOSFET Module RDS(on) = 0.38 m Phaseleg Configuration 11 3 10 3 2 9 1 8 8 9 1 11 10 2 Features MOSFET T1 + T2 Trench MOSFETs Symbol Conditions Maximum Ratings - low RDSon VDSS TVJ = 25 C to 150 C 75 V - optimized intrinsic reverse diode VGS 20 V package - low inductive current path ID25 TC = 2... See More ⇒
Advance Technical Information TrenchT2TM HiperFET VDSS = 75V FMM150-0075X2F N-Channel Power ID25 = 120A MOSFET RDS(on) 5.8m 3 3 T1 trr(typ) = 66ns 5 5 4 4 T2 1 1 Phase Leg Topology ISOPLUS i4-PakTM 2 2 Symbol Test Conditions Maximum Ratings TJ -55 ... +175 C 1 TJM 175 C Isolated Tab Tstg -55 ... +175 C 5 VISOL 50/60HZ, RMS, t... See More ⇒
Detailed specifications: MM1162, MM1163, MM1164, MM1461, MM1462, MM1500, MM1500A, MM1501, BD139, MM1505, MM1510, MM1511, MM1549, MM1550, MM1551, MM1553, MM1557
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