MM1619 Datasheet and Replacement
Type Designator: MM1619
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 48 V
Maximum Collector-Emitter Voltage |Vce|: 24 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 3.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 3
Noise Figure, dB: -
Package: X28
MM1619 Substitution
MM1619 Datasheet (PDF)
wmm161n15t2.pdf

WMM161N15T2 150V N-Channel Enhancement Mode Power MOSFET DescriptionWMM161N15T2 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFeatures GS V =150V, I = 161A DS DTO-263R
Datasheet: MM1601 , MM1602 , MM1603 , MM1605 , MM1606 , MM1607 , MM1613 , MM1614 , A1941 , MM1620 , MM1711 , MM1712 , MM1736 , MM1737 , MM1738 , MM1739 , MM1748 .
History: D45E1 | DMC96407 | BU826 | DTA124XMFHA | NSBA124EDXV6T1G | MJE13003M5 | MP5693
Keywords - MM1619 transistor datasheet
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History: D45E1 | DMC96407 | BU826 | DTA124XMFHA | NSBA124EDXV6T1G | MJE13003M5 | MP5693



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