MM1619 Specs and Replacement

Type Designator: MM1619

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 48 V

Maximum Collector-Emitter Voltage |Vce|: 24 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 3.5 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 3

Noise Figure, dB: -

Package: X28

 MM1619 Substitution

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MM1619 datasheet

 9.1. Size:483K  way-on

 wmm161n15t2.pdf pdf_icon

MM1619

WMM161N15T2 150V N-Channel Enhancement Mode Power MOSFET Description WMM161N15T2 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D Features G S V =150V, I = 161A DS D TO-263 R ... See More ⇒

Detailed specifications: MM1601, MM1602, MM1603, MM1605, MM1606, MM1607, MM1613, MM1614, D882, MM1620, MM1711, MM1712, MM1736, MM1737, MM1738, MM1739, MM1748

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