2N4359 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N4359
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO18
2N4359 Transistor Equivalent Substitute - Cross-Reference Search
2N4359 Datasheet (PDF)
2n4352.pdf
P-Channel Enhancement ModeMOSFET Amplifier/SwitchCORPORATION2N4352FEATURES ABSOLUTE MAXIMUM RATINGS(T = 25oC unless otherwise noted)A Low ON Resistance Low Capacitance Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V High Gain Drain-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V P-Chann
2n4351.pdf
2N4351 N-CHANNEL MOSFET Linear Integrated Systems ENHANCEMENT MODE FEATURES DIRECT REPLACEMENT FOR INTERSIL 2N4351 HIGH DRAIN CURRENT ID = 100mA TO-72HIGH GAIN gfs = 1000S BOTTOM VIEWABSOLUTE MAXIMUM RATINGS1 @ 25 C (unless otherwise stated) G 2 3 DMaximum Temperatures Storage Temperature -65 to +200 C Operating Junction Temperature -55 to +150 C 1 4S
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
