All Transistors. 2N4359 Datasheet

 

2N4359 Datasheet and Replacement


   Type Designator: 2N4359
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.36 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 6 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO18
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2N4359 Datasheet (PDF)

 9.1. Size:18K  calogic
 2n4352.pdf pdf_icon

2N4359

P-Channel Enhancement ModeMOSFET Amplifier/SwitchCORPORATION2N4352FEATURES ABSOLUTE MAXIMUM RATINGS(T = 25oC unless otherwise noted)A Low ON Resistance Low Capacitance Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V High Gain Drain-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V P-Chann

 9.2. Size:217K  linear-systems
 2n4351.pdf pdf_icon

2N4359

2N4351 N-CHANNEL MOSFET Linear Integrated Systems ENHANCEMENT MODE FEATURES DIRECT REPLACEMENT FOR INTERSIL 2N4351 HIGH DRAIN CURRENT ID = 100mA TO-72HIGH GAIN gfs = 1000S BOTTOM VIEWABSOLUTE MAXIMUM RATINGS1 @ 25 C (unless otherwise stated) G 2 3 DMaximum Temperatures Storage Temperature -65 to +200 C Operating Junction Temperature -55 to +150 C 1 4S

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2N2673 | 2SA1069 | 2N1446 | 2N5416 | 2N5666SM | 2N1559 | 2N5817

Keywords - 2N4359 transistor datasheet

 2N4359 cross reference
 2N4359 equivalent finder
 2N4359 lookup
 2N4359 substitution
 2N4359 replacement

 

 
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