2N4359 Specs and Replacement
Type Designator: 2N4359
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO18
2N4359 Substitution
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2N4359 datasheet
P-Channel Enhancement Mode MOSFET Amplifier/Switch CORPORATION 2N4352 FEATURES ABSOLUTE MAXIMUM RATINGS (T = 25oC unless otherwise noted) A Low ON Resistance Low Capacitance Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V High Gain Drain-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V P-Chann... See More ⇒
2N4351 N-CHANNEL MOSFET Linear Integrated Systems ENHANCEMENT MODE FEATURES DIRECT REPLACEMENT FOR INTERSIL 2N4351 HIGH DRAIN CURRENT ID = 100mA TO-72 HIGH GAIN gfs = 1000 S BOTTOM VIEW ABSOLUTE MAXIMUM RATINGS1 @ 25 C (unless otherwise stated) G 2 3 D Maximum Temperatures Storage Temperature -65 to +200 C Operating Junction Temperature -55 to +150 C 1 4 S ... See More ⇒
Detailed specifications: 2N4348, 2N4349, 2N4350, 2N4354, 2N4355, 2N4356, 2N4357, 2N4358, BD139, 2N438, 2N4383, 2N4384, 2N4385, 2N4386, 2N4387, 2N4388, 2N4389
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