All Transistors. 2N1110 Datasheet

 

2N1110 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N1110

Material of Transistor: Ge

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.03 W

Maximum Collector-Base Voltage |Vcb|: 16 V

Maximum Collector Current |Ic max|: 0.005 A

Max. Operating Junction Temperature (Tj): 100 ┬░C

Transition Frequency (ft): 15 MHz

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO22

2N1110 Transistor Equivalent Substitute - Cross-Reference Search

 

2N1110 Datasheet (PDF)

5.1. fdfm2n111.pdf Size:289K _fairchild_semi

2N1110
2N1110

August 2005 FDFM2N111 Integrated N-Channel PowerTrench« MOSFET and Schottky Diode General Description Applications FDFM2N111 combines the exceptional performance of Standard Buck Converter Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a Features MicroFET package. This device is designed specifically as a single package

Datasheet: 2N1103 , 2N1104 , 2N1105 , 2N1106 , 2N1107 , 2N1108 , 2N1109 , 2N111 , BC337 , 2N1111 , 2N1111A , 2N1111B , 2N1114 , 2N1115 , 2N1115A , 2N1116 , 2N1117 .

 


2N1110
  2N1110
  2N1110
 

social 

LIST

Last Update

BJT: EMT3FHA | EMT3 | EMT2FHA | EMT2 | EMT1FHA | EMT1DXV6T5G | EMT1DXV6T1G | EMT18 | EML22 | ECH8503-TL-H | ECH8502-TL-H | E13005D-213 | E13005-250 | E13005-225 | DXTN26070CY | DXTD882 | DXT696BK | DXT5616U | DXT2014P5 | DXT2012P5 |