2N1110 Specs and Replacement
Type Designator: 2N1110
Material of Transistor: Ge
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.03 W
Maximum Collector-Base Voltage |Vcb|: 16 V
Maximum Collector Current |Ic max|: 0.005 A
Max. Operating Junction Temperature (Tj): 100 °C
Electrical Characteristics
Transition Frequency (ft): 15 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO22
2N1110 Substitution
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2N1110 datasheet
August 2005 FDFM2N111 Integrated N-Channel PowerTrench MOSFET and Schottky Diode General Description Applications FDFM2N111 combines the exceptional performance of Standard Buck Converter Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a Features MicroFET package. This device is designed specifically as a single pack... See More ⇒
Detailed specifications: 2N1103, 2N1104, 2N1105, 2N1106, 2N1107, 2N1108, 2N1109, 2N111, 2N5401, 2N1111, 2N1111A, 2N1111B, 2N1114, 2N1115, 2N1115A, 2N1116, 2N1117
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