All Transistors. 2N1110 Datasheet

 

2N1110 Datasheet and Replacement


   Type Designator: 2N1110
   Material of Transistor: Ge
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.03 W
   Maximum Collector-Base Voltage |Vcb|: 16 V
   Maximum Collector Current |Ic max|: 0.005 A
   Max. Operating Junction Temperature (Tj): 100 °C
   Transition Frequency (ft): 15 MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO22
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2N1110 Datasheet (PDF)

 9.1. Size:286K  fairchild semi
 fdfm2n111.pdf pdf_icon

2N1110

August 2005FDFM2N111Integrated N-Channel PowerTrench MOSFET and Schottky Diode General Description ApplicationsFDFM2N111 combines the exceptional performance of Standard Buck ConverterFairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a FeaturesMicroFET package. This device is designed specifically as a single pack

Datasheet: 2N1103 , 2N1104 , 2N1105 , 2N1106 , 2N1107 , 2N1108 , 2N1109 , 2N111 , 2N2222 , 2N1111 , 2N1111A , 2N1111B , 2N1114 , 2N1115 , 2N1115A , 2N1116 , 2N1117 .

History: NESG204619

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