MMBR4957LT1 Datasheet, Equivalent, Cross Reference Search
Type Designator: MMBR4957LT1
SMD Transistor Code: 7F
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.278 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 1200 MHz
Collector Capacitance (Cc): 0.8 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: SOT23
MMBR4957LT1 Transistor Equivalent Substitute - Cross-Reference Search
MMBR4957LT1 Datasheet (PDF)
6.1. Size:66K motorola
mmbr4957.pdf
mmbr4957.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR4957LT1/DThe RF LinePNP SiliconMMBR4957LT1, T3High-Frequency Transistor. . . designed for highgain, lownoise amplifier oscillator and mixer applica-tions. Specifically packaged for thick and thinfilm circuits using surface mountcomponents. High Gain Gpe = 17 dB Typ @ f = 450 MHzIC = 30 mA
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
