All Transistors. MMBR4957LT3 Datasheet

 

MMBR4957LT3 Datasheet and Replacement


   Type Designator: MMBR4957LT3
   SMD Transistor Code: 7F
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.278 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.03 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1200 MHz
   Collector Capacitance (Cc): 0.8 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: SOT23
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MMBR4957LT3 Datasheet (PDF)

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MMBR4957LT3

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR4957LT1/DThe RF LinePNP SiliconMMBR4957LT1, T3High-Frequency Transistor. . . designed for highgain, lownoise amplifier oscillator and mixer applica-tions. Specifically packaged for thick and thinfilm circuits using surface mountcomponents. High Gain Gpe = 17 dB Typ @ f = 450 MHzIC = 30 mA

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: MJE341 | FT4019 | 2SA1233 | BUP23A | TIP527 | 2SC3969-220 | KT996B-2

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