All Transistors. MMBR5031LT1 Datasheet

 

MMBR5031LT1 Datasheet, Equivalent, Cross Reference Search

Type Designator: MMBR5031LT1

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 15 V

Maximum Collector-Emitter Voltage |Vce|: 10 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.02 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 1000 MHz

Collector Capacitance (Cc): 1.5 pF

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: SOT23

MMBR5031LT1 Transistor Equivalent Substitute - Cross-Reference Search

 

MMBR5031LT1 Datasheet (PDF)

2.1. mmbr5031.pdf Size:54K _motorola

MMBR5031LT1
MMBR5031LT1

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBR5031LT1/D The RF Line NPN Silicon MMBR5031LT1 High-Frequency Transistor Designed for thick and thin–film circuits using surface mount components and requiring low–noise, high–gain signal amplification at frequencies to 1.0 GHz. • High Gain — Gpe = 17 dB Typ @ f = 450 MHz • Low Noise — NF = 2.5 dB Typ @ f = 450 MHz RF AMPL

5.1. mmbr571lt1 mps571 mrf571 mrf5711lt1.pdf Size:358K _motorola

MMBR5031LT1
MMBR5031LT1

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBR571LT1/D The RF Line MMBR571LT1 NPN Silicon MPS571 MRF571 High-Frequency Transistors MRF5711LT1 Designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic package, as well as the popular TO–226AA (TO–92) package. This Motorola series of small–signal plast

5.2. mmbr521lt1 mrf5211lt1.pdf Size:151K _motorola

MMBR5031LT1
MMBR5031LT1

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBR521LT1/D The RF Line PNP Silicon MMBR521LT1 High-Frequency Transistor MRF5211LT1 Designed primarily for use in the high–gain, low–noise small–signal amplifiers for operation up to 3.5 GHz. Also usable in applications requiring fast switching times. • High Current Gain–Bandwidth Product — IC = –70 mA fT = 3.4 GHz (Typ) @

5.3. mmbr5179.pdf Size:55K _motorola

MMBR5031LT1
MMBR5031LT1

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBR5179LT1/D The RF Line NPN Silicon MMBR5179LT1 High-Frequency Transistor Designed for small–signal amplification at frequencies to 500 MHz. Specifically packaged for use in thick and thin–film circuits using surface mount components. • High Gain — Gpe = 15 dB Typ @ f = 200 MHz • Low Noise — NF = 4.5 dB Typ @ f = 200 MHz RF

Datasheet: MMBC1654N6 , MMBC1654N7 , MMBR2060 , MMBR2857 , MMBR4957 , MMBR4957LT1 , MMBR4957LT3 , MMBR5031 , S9014 , MMBR5179 , MMBR5179LT1 , MMBR521LT1 , MMBR536 , MMBR571LT1 , MMBR901 , MMBR901LT1 , MMBR901LT3 .

 


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