MMBR521LT1 Datasheet, Equivalent, Cross Reference Search
Type Designator: MMBR521LT1
SMD Transistor Code: 7M
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.333 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 2.5 V
Maximum Collector Current |Ic max|: 0.07 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3400 MHz
Collector Capacitance (Cc): 1 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: SOT23
MMBR521LT1 Transistor Equivalent Substitute - Cross-Reference Search
MMBR521LT1 Datasheet (PDF)
mmbr521lt1 mrf5211lt1.pdf
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR571LT1/DThe RF LineMMBR571LT1NPN SiliconMPS571 MRF571High-Frequency TransistorsMRF5711LT1Designed for low noise, wide dynamic range frontend amplifiers andlownoise VCOs. Available in a surfacemountable plastic package, as well asthe popular TO226AA (TO92) package. This Motorola series of smal
mmbr5031.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR5031LT1/DThe RF LineNPN SiliconMMBR5031LT1High-Frequency TransistorDesigned for thick and thinfilm circuits using surface mount componentsand requiring lownoise, highgain signal amplification at frequencies to 1.0GHz. High Gain Gpe = 17 dB Typ @ f = 450 MHz Low Noise NF = 2.5 dB Typ @ f
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N6988
