MMBT2369ALT1 Datasheet, Equivalent, Cross Reference Search
Type Designator: MMBT2369ALT1
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 500 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: SOT23
MMBT2369ALT1 Transistor Equivalent Substitute - Cross-Reference Search
MMBT2369ALT1 Datasheet (PDF)
mmbt2369alt1g.pdf
MMBT2369LT1G,SMMBT2369LT1G,MMBT2369ALT1G,SMMBT2369ALT1GSwitching Transistorshttp://onsemi.comNPN SiliconFeatures AEC-Q101 Qualified and PPAP CapableSOT-23 S Prefix for Automotive and Other Applications Requiring UniqueCASE 318Site and Control Change RequirementsSTYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant*COLLECTOR3M
mmbt2369l mmbt2369al.pdf
MMBT2369L, MMBT2369ALSwitching TransistorsNPN SiliconFeatures S Prefix for Automotive and Other Applications Requiring Uniquewww.onsemi.comSite and Control Change Requirements; AEC-Q101 Qualified andMARKINGPPAP CapableDIAGRAM These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant*SOT-23xxx MGCASE 318GSTYLE 6MAXIMUM RATINGS1Rating Symbo
pn2369a mmbt2369a.pdf
PN2369A MMBT2369ACEC TO-92BSOT-23BEMark: 1SNPN Switching TransistorThis device is designed for high speed saturated switching at collectorcurrents of 10 mA to 100 mA. Sourced from Process 21.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 15 VVCBO Collector-Base Voltage 40 VVEBO Emitter-Base Vo
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SA235H
