All Transistors. MMBT3906LT1 Datasheet

 

MMBT3906LT1 Datasheet, Equivalent, Cross Reference Search


   Type Designator: MMBT3906LT1
   SMD Transistor Code: 2A
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.35 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 135 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 4.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: SOT23

 MMBT3906LT1 Transistor Equivalent Substitute - Cross-Reference Search

   

MMBT3906LT1 Datasheet (PDF)

 ..1. Size:1670K  lge
mmbt3906lt1.pdf

MMBT3906LT1
MMBT3906LT1

MMBT3906LT1 PNP General Purpose Transistor1. BASE 2. EMITTER3. COLLECTORFEATURES A SOT-23 Epitaxial planar die construction. Dim Min MaxA 2.70 3.10E Complementary NPN type available B 1.10 1.50K BC 1.0 Typical(MMBT3904). D 0.4 TypicalE 0.35 0.48J Collector Current Capability ICM =-200mA. DG 1.80 2.00GH 0.02 0.1 Low Voltage(Max:-40V).J 0.1 Typi

 ..2. Size:355K  willas
mmbt3906lt1.pdf

MMBT3906LT1
MMBT3906LT1

FM120-M WILLASTHRUMMBT3906LT1General Purpose BARRIER RECTIFIERS -20V- 200VTransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKYSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123HPNP Silicon Low profile surface mounted application in order to

 ..3. Size:813K  shenzhen
mmbt3906lt1.pdf

MMBT3906LT1
MMBT3906LT1

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 TRANSISTOR ( PNP) FEATURES As complementary type, the NPN transistor MMBT3904LT1 is Recommended Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collecto

 0.1. Size:120K  onsemi
mmbt3906lt1-d.pdf

MMBT3906LT1
MMBT3906LT1

MMBT3906LT1GGeneral Purpose TransistorPNP SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGS1Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO -40 Vdc2Collector-Base Voltage VCBO -40 VdcEMITTEREmitter-Base Voltage VEBO -5.0 VdcCollector Current - Continuous IC -200 mAdc

 0.2. Size:128K  onsemi
mmbt3906lt1g.pdf

MMBT3906LT1
MMBT3906LT1

MMBT3906L, SMMBT3906LGeneral Purpose TransistorPNP SiliconFeatures AEC-Q101 Qualified and PPAP Capablehttp://onsemi.com S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change RequirementsCOLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTER

 4.1. Size:1218K  first silicon
mmbt3906ltg.pdf

MMBT3906LT1
MMBT3906LT1

MMBT3906LTGGeneral Purpose TransistorsPackage outlineFeatures We declare that the material of product compliance with RoHSrequirements.3Ordering Information1Device Marking Shipping2MMBT3906LTG 2A 3000/Tape & ReelSOT23Maximum Ratings3Rating Symbol Value UnitCOLLECTORCollector-Emitter Voltage VCEO -40 Vdc1Collector-Base Voltage VCBO -40 VdcBASEEmitt

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: FHS3906-ME | 2SC3996 | 2N525 | 2SA218 | 2PA1774RM

 

 
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