All Transistors. MMBT3906LT1 Datasheet

 

MMBT3906LT1 Datasheet, Equivalent, Cross Reference Search

Type Designator: MMBT3906LT1

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.35 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 135 °C

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 4.5 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: SOT23

MMBT3906LT1 Transistor Equivalent Substitute - Cross-Reference Search

 

MMBT3906LT1 Datasheet (PDF)

1.1. mmbt3906lp.pdf Size:157K _diodes

MMBT3906LT1
MMBT3906LT1

MMBT3906LP 40V PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data • Complementary NPN Type Available (MMBT3904LP) • Case: DFN1006-3 • Ultra-Small Leadless Surface Mount Package • Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 • “Lead Free”, RoHS Compliant (Note 1) • Moisture Sensitivity: Level 1 per J-STD-020 • Hal

1.2. mmbt3906lt1-d.pdf Size:120K _onsemi

MMBT3906LT1
MMBT3906LT1

MMBT3906LT1G General Purpose Transistor PNP Silicon Features • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO -40 Vdc 2 Collector-Base Voltage VCBO -40 Vdc EMITTER Emitter-Base Voltage VEBO -5.0 Vdc Collector Current - Continuous IC -200 mAdc 3 C

1.3. mmbt3906lt1.pdf Size:355K _willas

MMBT3906LT1
MMBT3906LT1

FM120-M WILLAS THRU MMBT3906LT1 General Purpose BARRIER RECTIFIERS -20V- 200V Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H PNP Silicon • Low profile surface mounted application in order to

1.4. mmbt3906lt1.pdf Size:813K _shenzhen-tuofeng-semi

MMBT3906LT1
MMBT3906LT1

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 TRANSISTOR ( PNP) FEATURES ·As complementary type, the NPN transistor MMBT3904LT1 is Recommended ·Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collecto

Datasheet: MMBT3903 , MMBT3903R , MMBT3904 , MMBT3904LT1 , MMBT3904R , MMBT3905 , MMBT3905R , MMBT3906 , 8550 , MMBT3906R , MMBT3962 , MMBT404 , MMBT404A , MMBT4121 , MMBT4122 , MMBT4123 , MMBT4124 .

 


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