All Transistors. MMBT5139 Datasheet

 

MMBT5139 Datasheet, Equivalent, Cross Reference Search

Type Designator: MMBT5139

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 125 °C

Transition Frequency (ft): 300 MHz

Collector Capacitance (Cc): 5 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO236

MMBT5139 Transistor Equivalent Substitute - Cross-Reference Search

 

MMBT5139 Datasheet (PDF)

4.1. pn5179 mps5179 mmbt5179.pdf Size:992K _fairchild_semi

MMBT5139

5.1. mmbt5550 mmbt5551.pdf Size:199K _motorola

MMBT5139
MMBT5139

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT5550LT1/D MMBT5550LT1 High Voltage Transistors * MMBT5551LT1 COLLECTOR NPN Silicon 3 *Motorola Preferred Device 1 BASE 2 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 CollectorEmitter Voltage VCEO 140 Vdc CollectorBase Voltage VCBO 160 Vdc CASE 31808, STYLE 6 SOT23 (TO236AB) EmitterBase Voltage

5.2. mmbt5087.pdf Size:406K _motorola

MMBT5139
MMBT5139

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT5087LT1/D Low Noise Transistor COLLECTOR MMBT5087LT1 3 PNP Silicon Motorola Preferred Device 1 BASE 2 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 CollectorEmitter Voltage VCEO 50 Vdc 2 CollectorBase Voltage VCBO 50 Vdc CASE 31808, STYLE 6 EmitterBase Voltage VEBO 3.0 Vdc SOT23 (TO236AB) Collecto

5.3. mmbt5088 mmbt5089.pdf Size:298K _motorola

MMBT5139
MMBT5139

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT5088LT1/D MMBT5088LT1 Low Noise Transistors * MMBT5089LT1 COLLECTOR NPN Silicon 3 *Motorola Preferred Device 1 BASE 2 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol 5088LT1 5089LT1 Unit 2 CollectorEmitter Voltage VCEO 30 25 Vdc CASE 31808, STYLE 6 CollectorBase Voltage VCBO 35 30 Vdc SOT23 (TO236AB) EmitterB

5.4. mmbt5401.pdf Size:189K _motorola

MMBT5139
MMBT5139

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT5401LT1/D High Voltage Transistor MMBT5401LT1 COLLECTOR PNP Silicon 3 Motorola Preferred Device 1 BASE 2 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 CollectorEmitter Voltage VCEO 150 Vdc CASE 31808, STYLE 6 CollectorBase Voltage VCBO 160 Vdc SOT23 (TO236AB) EmitterBase Voltage VEBO 5.0 Vdc

5.5. mmbt5770.pdf Size:302K _fairchild_semi

MMBT5139
MMBT5139

February 2008 MMBT5770 NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from process 43. 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitt

5.6. 2n5088 mmbt5088 2n5089 mmbt5089.pdf Size:97K _fairchild_semi

MMBT5139
MMBT5139

2N5088 MMBT5088 2N5089 MMBT5089 C E C TO-92 B B SOT-23 E Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1A to 50 mA. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 2N5088 30 V 2N5089 25 V VCBO Coll

5.7. 2n5771 mmbt5771.pdf Size:585K _fairchild_semi

MMBT5139
MMBT5139

2N5771 MMBT5771 C E C TO-92 B B SOT-23 E Mark: 3R PNP Switching Transistor This device is designed for very high speed saturated switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage 15

5.8. 2n5401 mmbt5401.pdf Size:75K _fairchild_semi

MMBT5139
MMBT5139

2N5401 MMBT5401 C E C TO-92 B B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 150 V VCBO Collector-Base Voltage 160 V VEBO Emitter-Base Voltage 5.0 V IC Co

5.9. 2n5551 mmbt5551.pdf Size:171K _fairchild_semi

MMBT5139
MMBT5139

June 2009 2N5551 / MMBT5551 NPN General Purpose Amplifier Features This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Suffix -C means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base) Suffix -Y means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V) 2N5551 MMBT5551 3 2 TO-92 SOT-23 1 Marking: 3S

5.10. 2n5210 mmbt5210.pdf Size:90K _fairchild_semi

MMBT5139
MMBT5139

2N5210/MMBT5210 NPN General Purpose Amplifier C This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1A to 50 mA. E C TO-92 BE B SOT-23 Mark: 3M Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 50 V VCBO Collector-Base Voltage 50 V VEBO Emitter-Base V

5.11. 2n5962 mmbt5962.pdf Size:469K _fairchild_semi

MMBT5139
MMBT5139

Discrete POWER & Signal Technologies 2N5962 MMBT5962 C E C TO-92 B B E SOT-23 Mark: 117 NPN General Purpose Amplifier This device is designed for use as low noise, high gain, general purpose amplifiers requiring collector currents to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units

5.12. mmbt5550.pdf Size:105K _fairchild_semi

MMBT5139
MMBT5139

August 2005 MMBT5550 NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. 3 2 SOT-23 1 Marking: 1F 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * Ta = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 140 V VCBO Collector-Base Voltage 160 V VEBO Emitt

5.13. 2n5086 2n5087 mmbt5087.pdf Size:100K _fairchild_semi

MMBT5139
MMBT5139

2N5086/2N5087/MMBT5087 PNP General Purpose Amplifier 3 This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50mA. 2 SOT-23 TO-92 1 Mark: 2Q 1 1. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emi

5.14. mmbt5401.pdf Size:67K _fairchild_semi

MMBT5139
MMBT5139

MMBT5401 PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for C applications requiring high voltage. E B SOT-23 Mark: 2L PNP Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage -150 V VCBO Collector-Base Voltage -160 V VEBO Emitter-Base Volt

5.15. mmbt5551.pdf Size:121K _diodes

MMBT5139
MMBT5139

MMBT5551 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Epitaxial Planar Die Construction Case: SOT-23 Complementary PNP Type Available (MMBT5401) Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Ideal for Low Power Amplification and Switching Moisture Sensitivity: L

5.16. mmbt5401.pdf Size:121K _diodes

MMBT5139
MMBT5139

MMBT5401 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Epitaxial Planar Die Construction Case: SOT-23 Complementary NPN Type Available (MMBT5551) Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Ideal for Low Power Amplification and Switching Moisture Sensitivity: L

5.17. mmbt5551.pdf Size:161K _mcc

MMBT5139
MMBT5139

MCC Micro Commercial Components TM MMBT5551 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features NPN Plastic Collector Current: ICM=0.6A Encapsulate Collector-Base Voltage: V(BR)CBO=180V Operating And Storage Temperatures 55OC to 150OC Transistor Capable of 0.3Watts of Power Dissipation Marking: G1

5.18. mmbt5401 2.pdf Size:162K _mcc

MMBT5139
MMBT5139

MCC Micro Commercial Components TM MMBT5401 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features PNP Plastic Collector Current: ICM=0.6A Encapsulate Collector-Base Voltage: V(BR)CBO=160V Operating And Storage Temperatures 55OC to 150OC Transistor Capable of 0.3Watts of Power Dissipation Marking: 2L

5.19. nsvmmbt5401wt1g.pdf Size:76K _onsemi

MMBT5139
MMBT5139

MMBT5401W High Voltage Transistor PNP Silicon Features • NSV Prefix for Automotive and Other Applications Requiring www.onsemi.com Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable COLLECTOR 3 • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit 2 EMITTER Collector-Emitter Vo

5.20. nsvmmbt5401lt3g.pdf Size:125K _onsemi

MMBT5139
MMBT5139

MMBT5401L, SMMBT5401L, NSVMMBT5401L High Voltage Transistor PNP Silicon http://onsemi.com Features • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS SOT-23 (TO-236) Compliant CASE 318 STYLE 6 MAXIMUM RATINGS COLLECTO

5.21. mmbt5550lt1 mmbt5551lt1.pdf Size:121K _onsemi

MMBT5139
MMBT5139

MMBT5550LT1G, MMBT5551LT1G High Voltage Transistors NPN Silicon http://onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 MAXIMUM RATINGS 1 BASE Rating Symbol Value Unit Collector-Emitter Voltage VCEO Vdc 2 MMBT5550 140 EMITTER MMBT5551 160 Collector-Base Voltage VCBO Vdc MARKING MMBT5550 160 3 DIAGRAM MMBT5551 180 1

5.22. nsvmmbt5087lt1g.pdf Size:99K _onsemi

MMBT5139
MMBT5139

MMBT5087L Low Noise Transistor PNP Silicon Features • NSV Prefix for Automotive and Other Applications Requiring http://onsemi.com Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable COLLECTOR 3 • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER Collector-Emitter V

5.23. mmbt5087lt1g.pdf Size:231K _onsemi

MMBT5139
MMBT5139

MMBT5087LT1G Low Noise Transistor PNP Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO -50 Vdc Collector-Base Voltage VCBO -50 Vdc 2 EMITTER Emitter-Base Voltage VEBO -3.0 Vdc Collector Current - Continuous IC -50 mAdc THERMAL CHA

5.24. nsvmmbt5088lt3g.pdf Size:82K _onsemi

MMBT5139
MMBT5139

MMBT5088L, MMBT5089L Low Noise Transistors NPN Silicon Features • S and NSV Prefix for Automotive and Other Applications Requiring http://onsemi.com Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* SOT-23 (TO-236) CASE 318 MAXIMUM RATINGS STYLE 6 Rating Symbol Value Unit

5.25. nsvmmbt589lt1g.pdf Size:144K _onsemi

MMBT5139
MMBT5139

MMBT589LT1G, NSVMMBT589LT1G High Current Surface Mount PNP Silicon Switching Transistor for Load http://onsemi.com Management in Portable Applications 30 VOLTS, 2.0 AMPS PNP TRANSISTORS Features  AEC-Q101 Qualified and PPAP Capable  NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT-23 (TO-236)  These Devices are P

5.26. mmbt589lt1.pdf Size:133K _onsemi

MMBT5139
MMBT5139

MMBT589LT1G High Current Surface Mount PNP Silicon Switching Transistor for Load Management in http://onsemi.com Portable Applications 30 VOLTS, 2.0 AMPS Features PNP TRANSISTORS These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 MAXIMUM RATINGS (TA = 25C) 1 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO -30 Vdc Collector-Base V

5.27. mmbt5401lt1-d.pdf Size:115K _onsemi

MMBT5139
MMBT5139

MMBT5401LT1G High Voltage Transistor PNP Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 Collector-Emitter Voltage VCEO -150 Vdc BASE Collector-Base Voltage VCBO -160 Vdc 2 Emitter-Base Voltage VEBO -5.0 Vdc EMITTER Collector Current - Continuous IC -500 mAdc Stress

5.28. mmbt5088lt1 mmbt5089lt1g.pdf Size:192K _onsemi

MMBT5139
MMBT5139

MMBT5088LT1G, MMBT5089LT1G Low Noise Transistors NPN Silicon http://onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 1 MAXIMUM RATINGS BASE Rating Symbol Value Unit 2 Collector-Emitter Voltage VCEO Vdc EMITTER MMBT5088 30 MMBT5089 25 Collector-Base Voltage VCBO Vdc 3 SOT-23 (TO-236) MMBT5088 35 MMBT5089 30 CASE 318 1

5.29. mmbt5551m3.pdf Size:151K _onsemi

MMBT5139
MMBT5139

MMBT5551M3T5G NPN High Voltage Transistor The MMBT5551M3T5G device is a spin-off of our popular SOT-23 three-leaded device. It is designed for general purpose high voltage applications and is housed in the SOT-723 surface mount http://onsemi.com package. This device is ideal for low-power surface mount applications where board space is at a premium. Features COLLECTOR 3 Reduces Board

5.30. mmbt5551.pdf Size:169K _utc

MMBT5139
MMBT5139

UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR ? DESCRIPTION The UTC MMBT5551 is a high voltage fast-switching NPN power transistor. It is characterized with high breakdown voltage, high current gain and high switching speed. ? FEATURES * High Collector-Emitter Voltage: VCEO=160V * High current gain ? ORDERING INFORMATION O

5.31. mmbt5401.pdf Size:99K _utc

MMBT5139
MMBT5139

UNISONIC TECHNOLOGIES CO., LTD MMBT5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *High Current Gain ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen-Free 1 2 3 MMBT5401L-x-AE3-R MMBT5401G-x-AE3-R SOT-23 E B C Tape Reel MARKING 2L. G: Halogen Free L: Lead Free www.

5.32. mmbt5551w.pdf Size:171K _secos

MMBT5139
MMBT5139

MMBT5551W NPN Silicon Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product SOT-323 A suffix of “-C” specifies halogen & lead-free FEATURE A L Ideal for Medium Power Amplification and Switching 3 3 Also Available in Lead Free Version Top View C B Complementary to MMBT5401W 1 1 2 2 K E D Collector H J F G 3 MARKING: K4N Milli

5.33. mmbt5551.pdf Size:326K _secos

MMBT5139
MMBT5139

MMBT5551 NPN Silicon Elek t ronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 Dim Min Max A L A 2.800 3.040 B 1.200 1.400 3 FEATURES C 0.890 1.110 S Top View B 1 2 D 0.370 0.500 G 1.780 2.040 Power dissipation V G H 0.013 0.100 o PCM: 0.3 W (Tamb=25 C) J 0.085 0.177 C K 0.450 0.600 Collector

5.34. mmbt591.pdf Size:207K _secos

MMBT5139
MMBT5139

MMBT591 PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES ? Dim Min Max COLLECTOR 3 ? A 2.800 3.040 3 B 1.200 1.400 Power dissipation 1 ? 1 C 0.890 1.110 2 PCM : 0.5 W BASE D 0.370 0.500 Collector Current G 1.780 2.040 ICM : -1 A A 2 H 0.013 0.100 L EMITTER Collector

5.35. mmbt5401w.pdf Size:226K _secos

MMBT5139
MMBT5139

MMBT5401W PNP Silicon Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product SOT-323 A suffix of “-C” specifies halogen & lead-free FEATURE A L Ideal for Medium Power Amplification and Switching 3 3 Also Available in Lead Free Version Top View C B Complementary to MMBT5551W 1 1 2 2 K E Collector 3 D H J F G MARKING: K4M 1 M

5.36. mmbt589.pdf Size:283K _secos

MMBT5139
MMBT5139

MMBT589 PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES SOT-23 A 2 ? ? Dim Min Max L Emitter 3 A 2.800 3.040 3 ? B 1.200 1.400 Top View S B 1 12 1 Base C 0.890 1.110 2 D 0.370 0.500 V G G 1.780 2.040 Collector 3 H 0.013 0.100 C J 0.085 0.177 H J D K K 0.450 0.600

5.37. mmbt5401.pdf Size:111K _secos

MMBT5139
MMBT5139

MMBT5401 PNP Silicon General PurposeTransistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES A L Ideal for medium power amplification and switching 3 3 Top View C B 1 1 2 MARKING 2 K E 2L D H J F G ABSOLUTE MAXIMUM RATINGS Millimeter Millimeter REF. REF. Min. Max. Min. Max. Parameter Symbol

5.38. mmbt593.pdf Size:349K _secos

MMBT5139
MMBT5139

MMBT593 PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES Collector A L 3 Medium Power Transistor 3 3 Top View C B 1 1 1 2 Base MARKING 2 K E 593 2 D Emitter H J F G ABSOLUTE MAXIMUM RATINGS Millimeter Millimeter REF. REF. Min. Max. Min. Max. Parameter

5.39. mmbt5551.pdf Size:1665K _htsemi

MMBT5139
MMBT5139

MMBT5551 TRANSISTOR(NPN) SOT–23 FEATURES Complementary to MMBT5401 Ideal for Medium Power Amplification and Switching 1. BASE MARKING: G1 2. EMITTER MAXIMUM RATINGS (Ta=25? unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA

5.40. mmbt589.pdf Size:875K _htsemi

MMBT5139
MMBT5139

MMBT58 9 TRANSISTOR(PNP) SOT-23 FEATURES High current surface mount PNP silicon switching transistor for Load management in portable applications 1. BASE 2. EMITTER MARKING :589 3. COLLECTOR MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V

5.41. mmbt5550.pdf Size:469K _htsemi

MMBT5139

MMBT5550 TRANSISTOR(NPN) SOT–23 FEATURES ? High Voltage Transistor MARKING:M1F MAXIMUM RATINGS (Ta=25? unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage 160 V CBO 3. COLLECTOR V Collector-Emitter Voltage 140 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current 600 mA C PC Collector Power Dissipation 225 mW R?JA Th

5.42. mmbt5401.pdf Size:373K _htsemi

MMBT5139
MMBT5139

MMBT5401 TRANSISTOR(PNP) SOT-23 1. BASE FEATURES 2. EMITTER Complementary to MMBT5551 3. COLLECTOR Ideal for medium power amplification and switching - MARKING: 2L MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Curren

5.43. mmbt5551.pdf Size:295K _gsme

MMBT5139
MMBT5139

? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM5551 MAXIMUM RATINGS ¦MAXIMUM RATINGS ????? MAXIMUM RATINGS Characteristic Symbol Rating Unit ???? ?? ??? ?? Collector Emitter Voltage VCEO 160 Vdc ???-????? Collector Base Voltage VCBO 180 Vdc ???-???? Emitter Base Voltage VEBO 5.

5.44. mmbt5401.pdf Size:295K _gsme

MMBT5139
MMBT5139

? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM5401 MAXIMUM RATINGS ¦MAXIMUM RATINGS ????? MAXIMUM RATINGS Characteristic Symbol Rating Unit ???? ?? ??? ?? Collector-Emitter Voltage VCEO -150 Vdc ???-????? Collector-Base Voltage VCBO -160 Vdc ???-???? Emitter-Base Voltage VEBO

5.45. mmbt589 sot-23.pdf Size:228K _lge

MMBT5139
MMBT5139

MMBT589 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features High current surface mount PNP silicon switching transistor for Load management in portable applications MARKING :589 MAXIMUM RATINGS (TA=25? unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Vol

5.46. mmbt5551.pdf Size:195K _lge

MMBT5139
MMBT5139

MMBT5551 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to MMBT5401 Ideal for medium power amplification and switching MARKING: G1 MAXIMUM RATINGS (TA=25? unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Vo

5.47. mmbt5401.pdf Size:194K _lge

MMBT5139
MMBT5139

MMBT5401 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to MMBT5551 Ideal for medium power amplification and switching MARKING: 2L Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-B

5.48. mmbt5550-51.pdf Size:766K _wietron

MMBT5139
MMBT5139

MMBT5550 MMBT5551 High Voltage NPN Transistors COLLECTOR 3 3 1 1 BASE 2 2 SOT-23 EMITTER MMBT5550 MMBT5551 V CEO 140 160 160 180 6.0 600 556 300 2.4 417 MMBT5550 = M1F ; MMBT5551 = G1 (TA=25 C unless otherwise noted) (3) MMBT5550 140 1.0 , MMBT5551 160 MMBT5550 160 -100 , 180 MMBT5551 6.0 10 , WEITRON http://www.weitron.com.tw MMBT5550 MMBT5551 ELECTRICAL CH

5.49. mmbt5088-89.pdf Size:442K _wietron

MMBT5139
MMBT5139

MMBT5088 MMBT5089 COLLECTOR Low Noise NPN Transistor 3 3 Surface Mount 1 1 2 BASE P b Lead(Pb)-Free 2 SOT-23 EMITTER Maximum Ratings Rating Symbol 5088LT1 5089LT1 Unit Collector-Emitter Voltage V 30 25 Vdc CE O Collector-B as e Voltage VCB O 35 30 Vdc E m itter-B as e Voltage VE B O 4.5 Vdc Collector Current-Continuous IC mAdc 50 Thermal Characteristics Characteristics Sy

5.50. mmbt5401.pdf Size:497K _wietron

MMBT5139
MMBT5139

MMBT5401 High Voltage PNP Transistors COLLECTOR 3 3 1 1 BASE 2 2 SOT-23 EMITTER WEITRON http://www.weitron.com.tw MMBT5401 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain - 50 (IC=-1.0mAdc, VCE=-5.0Vdc) hFE - 60 240 (IC=-10mAdc, VCE=-5.0Vdc) 50 - (IC=-50mAdc, VCE=-5.0Vdc) C

5.51. mmbt555xlt1.pdf Size:361K _willas

MMBT5139
MMBT5139

FM120-M WILLAS MMBT555xLT1 THRU High Voltage Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board

5.52. mmbt5401lt1.pdf Size:325K _willas

MMBT5139
MMBT5139

FM120-M WILLAS MMBT5401LT1 THRU High Voltage Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H FEATURE • Low profile surface mounted application in order to opti

5.53. mmbt5551dw1t1.pdf Size:335K _willas

MMBT5139
MMBT5139

FM120-M MMBT5551DW1T1 WILLAS THRU DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low pr FEATUREofile surface mounted applicat

5.54. mmbt5551wt1.pdf Size:330K _willas

MMBT5139
MMBT5139

FM120-M WILLAS THRU MMBT5551WT1 FM1200-M 1.0A SURFACE MOUNT SCHOTTKY DUAL NPN SMALL SIGNAL SURFACE BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product MOUNT TRANSISTOR Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in ord

5.55. mmbt5401 sot-23.pdf Size:304K _can-sheng

MMBT5139
MMBT5139

 深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors MMBT5401 TRANSISTOR (PNP) FEATURES Complimentary to MMBT5551 MARKING:2L MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units (符号) (参数名称) (额定值) (单位) VCBO Collector-B

5.56. mmbt5551 sot-23.pdf Size:304K _can-sheng

MMBT5139
MMBT5139

 深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors MMBT5551 TRANSISTOR (NPN) FEATURES Complimentary to MMBT5401 MARKING:G1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units (符号) (参数名称) (额定值) (单位) VCBO Collector-B

5.57. mmbt5551t.pdf Size:920K _blue-rocket-elect

MMBT5139
MMBT5139

MMBT5551T(BR3DG5551T) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-89 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-89 Plastic Package. 特征 / Features 击穿电压高,可与 MMBT5401T(BR3CG5401T)互补。 High voltage, complementary pair with MMBT5401T(BR3CG5401T). 用途 / Applications 用于普通高压放大。 General purpose high voltag

5.58. mmbt5401t.pdf Size:920K _blue-rocket-elect

MMBT5139
MMBT5139

MMBT5401T(BR3CG5401T) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-89 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-89 Plastic Package. 特征 / Features 击穿电压高,可与 MMBT5551T(BR3DG5551T)互补。 High voltage, complementary Pair with MMBT5551T(BR3DG5551T). 用途 / Applications 用于普通高压放大。 General purpose high voltag

5.59. mmbt5551.pdf Size:1015K _kexin

MMBT5139
MMBT5139

SMD Type Transistors SMD Type NPN Transistors (KMBT5551) MMBT5551 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features High Voltage Transistors Pb-Free Packages are Available 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 180 V Collector-emitter volt

5.60. mmbt5088.pdf Size:1246K _kexin

MMBT5139
MMBT5139

SMD Type Transistors NPN Transistors MMBT5088 (KMBT5088) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=100mA ● Collector Emitter Voltage VCEO=30V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage V

5.61. mmbt5089.pdf Size:2148K _kexin

MMBT5139
MMBT5139

SMD Type Transistors NPN Transistors MMBT5089 (KMBT5089) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=100mA ● Collector Emitter Voltage VCEO=25V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage V

5.62. mmbt5550.pdf Size:340K _kexin

MMBT5139

SMD Type Transistors NPN Transistors MMBT5550 (KMBT5550) SOT-23 Unit: mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 ■ Features ● Collector Current Capability IC=0.6A ● Collector Emitter Voltage VCEO=140V 1 2 ● High Voltage Transistor +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit

5.63. mmbt5087.pdf Size:1787K _kexin

MMBT5139
MMBT5139

SMD Type Transistors PNP Transistors MMBT5087 (KMBT5087) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current Capability IC=-100mA ● Collector Emitter Voltage VCEO=-50V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage

5.64. mmbt5401.pdf Size:1140K _kexin

MMBT5139
MMBT5139

SMD Type Transistors SMD Type PNP Transistors MMBT5401 (KMBT5401) SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features High Voltage Transistors Pb-Free Packages are Available 1 2 +0.1 0.95-0.1 0.1+0.05 -0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -160 V Collector-emitter volta

5.65. mmbt5551lt1.pdf Size:521K _shenzhen-tuofeng-semi

MMBT5139
MMBT5139

Shenzhen Tuofeng Semiconductor Technology Co., Ltd. SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT5551LT1 TRANSISTOR (NPN) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation 2. 4 PCM: 0.3 W (Tamb=25℃) 1. 3 Collector current ICM: 0.6 A Collector-base voltage V(BR)CBO: 180 V Operating and storage junction temperature range Unit: mm TJ, T

5.66. mmbt5401lt1.pdf Size:910K _shenzhen-tuofeng-semi

MMBT5139
MMBT5139

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT5401LT1 TRANSISTOR (PNP) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR - Power dissipation 2. 4 PCM: 0.3 W (Tamb=25℃) 1. 3 Collector current ICM: -0.6 A Collector-base voltage V(BR)CBO: -160 V Operating and storage junction temperature range Unit: mm

Datasheet: MMBT5131 , MMBT5132 , MMBT5133 , MMBT5134 , MMBT5135 , MMBT5136 , MMBT5137 , MMBT5138 , MPSA42 , MMBT5140 , MMBT5141 , MMBT5142 , MMBT5143 , MMBT5172 , MMBT5179 , MMBT5400 , MMBT5400R .

 


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