MMBT5816 Datasheet, Equivalent, Cross Reference Search
Type Designator: MMBT5816
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.75 A
Max. Operating Junction Temperature (Tj): 135 °C
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO236
MMBT5816 Transistor Equivalent Substitute - Cross-Reference Search
MMBT5816 Datasheet (PDF)
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mmbt589lt1g nsvmmbt589lt1g.pdf
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mmbt589lt1g.pdf
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mmbt589lt1.pdf
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mmbt589.pdf
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mmbt589.pdf
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mmbt589.pdf
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mmbt589 sot-23.pdf
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