MMBTA13 Datasheet. Specs and Replacement

Type Designator: MMBTA13  📄📄 

SMD Transistor Code: 1M_K2D_K3D_s1M

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.35 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 125 MHz

Forward Current Transfer Ratio (hFE), MIN: 12000

Noise Figure, dB: -

Package: SOT23

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MMBTA13 datasheet

 ..1. Size:235K  motorola

mmbta13 mmbta14.pdf pdf_icon

MMBTA13

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBTA13LT1/D MMBTA13LT1 Darlington Amplifier Transistors MMBTA14LT1 * NPN Silicon COLLECTOR 3 *Motorola Preferred Device BASE 1 3 EMITTER 2 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector Emitter Voltage VCES 30 Vdc CASE 318 08, STYLE 6 SOT 23 (TO 236AB) Collector Base Voltage VCBO 30 Vdc Emitte... See More ⇒

 ..2. Size:48K  fairchild semi

mmbta13.pdf pdf_icon

MMBTA13

January 2005 MMBTA13 NPN Darlington Transistor This device is designed for applications requiring extremely high Current gain at collector Currents to 1.0A. Sourced from process 05. See MPSA14 for characteristics. 3 2 SOT-23 1 Mark 1M 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCES Collector-... See More ⇒

 ..3. Size:8K  utc

mmbta13.pdf pdf_icon

MMBTA13

UTC MMBTA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MMBTA13 is a darlington transistor. FEATURES 1 *Collector-Emitter Voltage Vces = 30V *Collector Dissipation Pc ( mas ) = 625 mW SOT-23 1 EMITTER 2 BASE 3 COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified ) PARAMETER SYMBOL VALUE UNIT Collector-B... See More ⇒

 ..4. Size:692K  jiangsu

mmbta13.pdf pdf_icon

MMBTA13

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBTA13 TRANSISTOR (NPN) Unit mm FEATURES 1. BASE Darlington Amplifier 2. EMITTER 3. COLLECTOR Marking K2D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base... See More ⇒

Detailed specifications: MMBT918R, MMBT930, MMBT930R, MMBTA05, MMBTA05LT1, MMBTA06, MMBTA06LT1, MMBTA12, A1015, MMBTA13LT1, MMBTA14, MMBTA14LT1, MMBTA20, MMBTA20LT1, MMBTA28, MMBTA42, MMBTA42LT1

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