MMBTA13LT1 Specs and Replacement

Type Designator: MMBTA13LT1

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 125 MHz

Forward Current Transfer Ratio (hFE), MIN: 5000

Noise Figure, dB: -

Package: SOT23

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MMBTA13LT1 datasheet

 0.1. Size:791K  onsemi

mmbta13lt1g mmbta14lt1g.pdf pdf_icon

MMBTA13LT1

MMBTA13L, SMMBTA13L, MMBTA14L, SMMBTA14L Darlington Amplifier Transistors NPN Silicon http //onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS SOT-23 (TO-236) Compliant* CASE 318 STYLE 6 COLLECTOR 3 MAXIM... See More ⇒

 7.1. Size:235K  motorola

mmbta13 mmbta14.pdf pdf_icon

MMBTA13LT1

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBTA13LT1/D MMBTA13LT1 Darlington Amplifier Transistors MMBTA14LT1 * NPN Silicon COLLECTOR 3 *Motorola Preferred Device BASE 1 3 EMITTER 2 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector Emitter Voltage VCES 30 Vdc CASE 318 08, STYLE 6 SOT 23 (TO 236AB) Collector Base Voltage VCBO 30 Vdc Emitte... See More ⇒

 7.2. Size:48K  fairchild semi

mmbta13.pdf pdf_icon

MMBTA13LT1

January 2005 MMBTA13 NPN Darlington Transistor This device is designed for applications requiring extremely high Current gain at collector Currents to 1.0A. Sourced from process 05. See MPSA14 for characteristics. 3 2 SOT-23 1 Mark 1M 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCES Collector-... See More ⇒

 7.3. Size:8K  utc

mmbta13.pdf pdf_icon

MMBTA13LT1

UTC MMBTA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MMBTA13 is a darlington transistor. FEATURES 1 *Collector-Emitter Voltage Vces = 30V *Collector Dissipation Pc ( mas ) = 625 mW SOT-23 1 EMITTER 2 BASE 3 COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified ) PARAMETER SYMBOL VALUE UNIT Collector-B... See More ⇒

Detailed specifications: MMBT930, MMBT930R, MMBTA05, MMBTA05LT1, MMBTA06, MMBTA06LT1, MMBTA12, MMBTA13, 13007, MMBTA14, MMBTA14LT1, MMBTA20, MMBTA20LT1, MMBTA28, MMBTA42, MMBTA42LT1, MMBTA43

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