MMBTA56 Datasheet and Replacement

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBTA55LT1/DDriver TransistorsMMBTA55LT1COLLECTORPNP Silicon3MMBTA56LT1**Motorola Preferred Device1BASE2EMITTERMAXIMUM RATINGS3Rating Symbol MMBTA55 MMBTA56 Unit1CollectorEmitter Voltage VCEO 60 80 Vdc2CollectorBase Voltage VCBO 60 80 VdcEmitterBase Voltage VEBO 4.0 Vdc

February 2006MPSA56/MMBTA56/PZTA56 PNP General Purpose AmplifierDescriptionThis device is designed for general purpose amplifierapplications at collector currents to 300mA. Sourcedfrom Process 73Absolute Maximum Ratings*TA = 25C unless otherwise specified.Parameter Symbol Value UnitCollector-Emitter Voltage VCES -80 VCollector-Base Voltage VCBO -80 VEmitter-Base Voltag

MMBTA55 / MMBTA56 PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT-23 Ideal for Low Power Amplification and Switching Case Material: Molded Plastic, Green Molding Compound; Complementary NPN Type: MMBTA05 / MMBTA06 UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Complian

SMBTA56/MMBTA56PNP Silicon AF Transistor Low collector-emitter saturation voltage23 Complementary type: SMBTA06 / MMBTA06(NPN)1 Pb-free (RoHS compliant) package Qualified according AEC Q101Type Marking Pin Configuration PackageSMBTA56/MMBTA56 s2G SOT231=B 2=E 3=CMaximum RatingsParameter Symbol Value Unit80 VCollector-emitter voltage VCEO80Collector-

MCCMMBTA55TM Micro Commercial Components20736 Marilla Street ChatsworthTHRUMicro Commercial ComponentsCA 91311Phone: (818) 701-4933MMBTA56Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)PNP General This device is designed for general purpose amplifier applications atcollector curren

MMBTA55,MMBTA56Features Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingPNP General Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information)Purpose AmplifierMaximum Ratings @ 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

UNISONIC TECHNOLOGIES CO., LTD MMBTA56 PNP SILICON TRANSISTOR AMPLIFIER TRANSISTOR FEATURES 3* Collector-Emitter Voltage: VCEO=-80V * Collector Dissipation: PD=350mW 12SOT-23 ORDERING INFORMATION Ordering Number Pin AssignmentPackage Packing Lead Free Halogen Free 1 2 3MMBTA56L-AE3-R MMBTA56G-AE3-R SOT-23 E B C Tape Reel MARKING www.unisonic.com.tw 1 of 5

MMBTA56 -0.5A , -80V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES General Purpose Amplifier Applications AL33MARKING Top View C B11 22GM 2K EDPACKAGE INFORMATION H JF GPackage MPQ Leader Size SOT-23 3K 7 inch Millimeter Millimeter R

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA56 TRANSISTOR (PNP) SOT23 FEATURES General Purpose Amplifier Applications MARKING: 2GM 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -80 V CBOV Collector-Emitter Voltage -80 V

SEMICONDUCTOR MMBTA56TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORAUDIO FREQUENCY AMPLIFIER APPLICATIONS.FEATUREEComplementary to MMBTA06 L B LDIM MILLIMETERS_+2.93 0.20AB 1.30+0.20/-0.15C 1.30 MAX23 D 0.45+0.15/-0.05E 2.40+0.30/-0.20MAXIMUM RATING (Ta=25 )1G 1.90H 0.95CHARACTERISTIC SYMBOL RATING UNITJ 0.13+0.10/-0.05K 0.00 ~ 0.10VCBOCollector-B

MMBTA56TRANSISTOR(PNP) SOT23 FEATURES General Purpose Amplifier Applications MARKING: 2GM 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -80 V CBOV Collector-Emitter Voltage -80 V CEOVEBO Emitter-Base Voltage -4 V IC Collector Current -500 mA P Collector Power Dissip

MMBTA56 PNP General Purpose Transistor for amplifier applications On special request, these transistors can be manufactured in different pin configurations. TO-236 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 80 VCollector Emitter Voltage -VCES 80 VEmitter Base Voltage -VEBO 4 VCollector Current -IC 500 mA

SMD Type TransistorsPNP TransistorsMMBTA56 (KMBTA56)SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=-0.5A Collector Emitter Voltage VCEO=-80V1 2COLLECTOR+0.1+0.053 0.95 -0.1 0.1-0.01+0.11.9 -0.111.BaseBASE2.Emitter3.collector2EMITTER Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Un

PMMBTA05 / MMBTA06 / MMBTA55 / MMBTA56 NPN AND PNP HIGH VOLTAGE TRANSISTOR SOT-23 Unit: inch(mm) 60~80V 225mW Voltage Power Features NPN and PNP silicon, planar design Collector current IC = 500mA Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard Mechanical Data Case: SOT-23 Package Terminals: Solderable

RoHS RoHSCOMPLIANT COMPLIANTMMBTA55 THRU MMBTA56 PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic InsertionMechanical Data Package: SOT-23 Molding compound

MMBTA55L Series,MMBTA56L Series,SMMBTA56L SeriesDriver TransistorsPNP Siliconwww.onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified andPPAP CapableSOT-23 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCASE 318STYLE 6CompliantCOLLECTOR3MAXIMUM RATINGSRat

MMBTA56W, SMMBTA56WDriver TransistorPNP SiliconFeatures Moisture Sensitivity Level: 1http://onsemi.com ESD Rating: Human Body Model - 4 kV Machine Model - 400 V S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified andPPAP Capable SC-70 (SOT-323)CASE 419 These Devices are Pb-Free, Halog

MMBTA55LT1G,MMBTA56LT1GDriver TransistorsPNP Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant31BASEMAXIMUM RATINGS2EMITTERRating Symbol Value UnitCollector-Emitter Voltage VCEO VdcMMBTA55 -603MMBTA56 -80Collector-Base Voltage VCBO VdcMMBTA55 -60 1MMBTA56 -802Emitter-Base Voltage VE

MMBTA56W, SMMBTA56WDriver TransistorPNP SiliconFeatures Moisture Sensitivity Level: 1www.onsemi.com ESD Rating: Human Body Model - 4 kV Machine Model - 400 V S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified andPPAP Capable SC-70 (SOT-323)CASE 419 These Devices are Pb-Free, Halogen

MMBTA55L Series,MMBTA56L Series,SMMBTA56L SeriesDriver TransistorsPNP Siliconwww.onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified andPPAP CapableSOT-23 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCASE 318STYLE 6CompliantCOLLECTOR3MAXIMUM RATINGSRat

MMBTA55L Series,MMBTA56L Series,SMMBTA56L SeriesDriver TransistorsPNP Siliconhttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change RequirementsSOT-23 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS CASE 318STYLE 6Compliant*COLLECTOR3MAXIMUM RATING

MMBTA55 / MMBTA56 PNP Silicon Elektronische BauelementeDriver Transistor RoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeSOT-23SOT-233Dim Min Max1 AA 2.800 3.040L2B 1.200 1.4003C 0.890 1.110SCOLLECTOR Top ViewBD 0.370 0.5001 23G 1.780 2.040V G H 0.013 0.1001J 0.085 0.177BASEC K 0.450 0.600L 0.890 1.0202HJDE

www.jscj-elec.com AD-MMBTA56 JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-MMBTA56 Plastic-Encapsulated Transistor AD-MMBTA56 Transistor (PNP) FEATURES General purpose amplifier applications AEC-Q101 qualified MARKING 2GM = Device code 2GM Version 1.0 1 / 6 2021-07-01 www.jscj-elec.com AD-MMBTA56 MAXIMUM RATINGS (T = 25C unless otherwise specifie

PMMBTA05-AU / MMBTA06-AU / MMBTA55-AU / MMBTA56-AU NPN AND PNP HIGH VOLTAGE TRANSISTOR SOT-23 Unit: inch(mm) 60~80V 225mW Voltage Power Features NPN and PNP silicon, planar design Collector current IC = 500mA AEC-Q101 qualified Lead free in compliance with EU RoHS2.0 (2011/65/EU & 2015/865/EU directive) Green molding compound as per IEC61249 Std.. (

MMBTA56 SOT-23 Plastic-Encapsulate Transistors TRANSI STOR (PNP)MARKING: Equivalent Circuit:SOT-231.BASE2.EMITTER3.COLLECTORFEATURES: Complimentary Type NPN Transistor MMBTA06 General Purpose Amplifier ApplicationsMAXIMUM RATINGS (Ta=25 unless otherwise noted)Parameter Symbol Value UnitCollector-Base Voltage VCBO -80 VCollector-Emitter Voltage VCEO -80 VEm