MMBTA64LT1 Datasheet, Equivalent, Cross Reference Search
Type Designator: MMBTA64LT1
SMD Transistor Code: 2V
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.33 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 125 MHz
Forward Current Transfer Ratio (hFE), MIN: 20000
Noise Figure, dB: -
Package: SOT23
MMBTA64LT1 Transistor Equivalent Substitute - Cross-Reference Search
MMBTA64LT1 Datasheet (PDF)
mmbta63lt1g mmbta64lt1g.pdf
MMBTA63LT1G,MMBTA64LT1G,SMMBTA64LT1GDarlington TransistorsPNP Siliconhttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change RequirementsSOT-23 (TO-236) These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCASE 318Compliant*STYLE 6MAXIMUM RATINGSCOLLECTOR
mmbta63l mmbta64.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBTA63LT1/DDarlington TransistorsMMBTA63LT1PNP SiliconCOLLECTOR 3MMBTA64LT1**Motorola Preferred DeviceBASE1EMITTER 23MAXIMUM RATINGS1Rating Symbol Value Unit2CollectorEmitter Voltage VCES 30 VdcCollectorBase Voltage VCBO 30 VdcCASE 31808, STYLE 6EmitterBase Voltage VEBO 10
mpsa64 mmbta64 pzta64.pdf
November 2011MPSA64 / MMBTA64 / PZTA64PNP Darlington TransistorFeatures This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61.MPSA64 MMBTA64 PZTA64CCEECBTO-92 SOT-23 SOT-223BMark:2VEBCAbsolute Maximum Ratings* Ta = 25C unless otherwise noted Symbol Parameter Value UnitsVCES Coll
mmbta63 mmbta64.pdf
SEMICONDUCTOR MMBTA63/64TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR.EL B LDIM MILLIMETERS_+2.93 0.20AB 1.30+0.20/-0.15C 1.30 MAX23 D 0.45+0.15/-0.05MAXIMUM RATING (Ta=25 )E 2.40+0.30/-0.201G 1.90CHARACTERISTIC SYMBOL RATING UNITH 0.95J 0.13+0.10/-0.05Collector-Base VCBO -30 VMMBTA63/64 K 0.00 ~
mmbta64.pdf
MMBTA64TRANSISTOR(PNP)SOT23 FEATURES For Applications Requiring High Current Gain MARKING:2V 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR VCBO Collector-Base Voltage -30 V V Collector-Emitter Voltage -30 V CEOV Emitter-Base Voltage -10 V EBOI Collector Current -800 mA CP Collector Power
mmbta64.pdf
MMBTA64COLLECTORDarlington Transistor 33PNP Silicon 1 1BASE2SOT-232EMITTERMAXIMUM RATINGS (Ta=25 C)Rating Symbol ValueUnitVCollector-Emitter Voltage CES -30 VdcCollector-Base Voltage VCBO-30 VdcEmitter-Base Voltage VEBO-10 VdcICmAdcCollector Current-Continuous -500THERMAL CHARACTERISTICSCharacteristics Symbol ValueUnitTotal Device Dissipation
mmbta64.pdf
SEMICONDUCTORMMBTA64TECHNICAL DATADarlington TransistorsPNP SiliconWe declare that the material of product3compliance with RoHS requirements.2MAXIMUM RATINGS1Rating Symbol Value Unit SOT 23 CollectorEmitter Voltage VCES 30 VdcCollectorBase Voltage VCBO 30 VdcEmitterBase Voltage VEBO 10 VdcCollector Current Continuous IC 500 mAdcDEVIC
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
