MMBTA70LT1 Datasheet, Equivalent, Cross Reference Search
Type Designator: MMBTA70LT1
SMD Transistor Code: M2C
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.33 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 125 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: SOT23
MMBTA70LT1 Transistor Equivalent Substitute - Cross-Reference Search
MMBTA70LT1 Datasheet (PDF)
mmbta70lt1g.pdf
MMBTA70LT1GGeneral Purpose TransistorPNP SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit1Collector-Emitter Voltage VCEO -40 VdcBASEEmitter-Base Voltage VEBO -4.0 Vdc2Collector Current - Continuous IC -100 mAdcEMITTERTHERMAL CHARACTERISTICSCharacterist
mmbta70lt1-d.pdf
MMBTA70LT1GGeneral Purpose TransistorPNP SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit1Collector-Emitter Voltage VCEO -40 VdcBASEEmitter-Base Voltage VEBO -4.0 Vdc2Collector Current - Continuous IC -100 mAdcEMITTERTHERMAL CHARACTERISTICSCharacterist
mmbta70l.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBTA70LT1/DGeneral Purpose TransistorMMBTA70LT1COLLECTORPNP Silicon31BASE23EMITTERMAXIMUM RATINGS1Rating Symbol Value Unit2CollectorEmitter Voltage VCEO 40 VdcEmitterBase Voltage VEBO 4.0 Vdc CASE 31808, STYLE 6SOT23 (TO236AB)Collector Current Continuous IC 100 mAdc
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
