MP110G Datasheet, Equivalent, Cross Reference Search
Type Designator: MP110G
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 106 W
Maximum Collector-Base Voltage |Vcb|: 65 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 20 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 110 °C
Transition Frequency (ft): 0.16 MHz
Forward Current Transfer Ratio (hFE), MIN: 145
Noise Figure, dB: -
Package: TO3
MP110G Transistor Equivalent Substitute - Cross-Reference Search
MP110G Datasheet (PDF)
dmp1100ucb4.pdf
DMP1100UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ @VGS = -4.5V, TA = +25C) Features and Benefits Built-in G-S Protection Diode against ESD 2kV HBM BVDSS RDS(ON) Qg Qgd ID Ultra Small 0.8mm x 0.8mm Package -12V 65m 9nC 2.4nC -3.2A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3)
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2SC3549