2N1115 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N1115
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Collector Current |Ic max|: 0.125 A
Max. Operating Junction Temperature (Tj): 85 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 35
Noise Figure, dB: -
Package: R32
2N1115 Transistor Equivalent Substitute - Cross-Reference Search
2N1115 Datasheet (PDF)
9.1. Size:286K fairchild semi
fdfm2n111.pdf
fdfm2n111.pdf
August 2005FDFM2N111Integrated N-Channel PowerTrench MOSFET and Schottky Diode General Description ApplicationsFDFM2N111 combines the exceptional performance of Standard Buck ConverterFairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a FeaturesMicroFET package. This device is designed specifically as a single pack
Datasheet: 2N1108 , 2N1109 , 2N111 , 2N1110 , 2N1111 , 2N1111A , 2N1111B , 2N1114 , TIP122 , 2N1115A , 2N1116 , 2N1117 , 2N1118 , 2N1118A , 2N1119 , 2N111A , 2N112 .
