All Transistors. 2N1115A Datasheet

 

2N1115A Datasheet and Replacement


   Type Designator: 2N1115A
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 35 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Collector Current |Ic max|: 0.125 A
   Max. Operating Junction Temperature (Tj): 85 °C
   Transition Frequency (ft): 4 MHz
   Forward Current Transfer Ratio (hFE), MIN: 35
   Noise Figure, dB: -
   Package: R32
 

 2N1115A Substitution

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2N1115A Datasheet (PDF)

 9.1. Size:286K  fairchild semi
 fdfm2n111.pdf pdf_icon

2N1115A

August 2005FDFM2N111Integrated N-Channel PowerTrench MOSFET and Schottky Diode General Description ApplicationsFDFM2N111 combines the exceptional performance of Standard Buck ConverterFairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a FeaturesMicroFET package. This device is designed specifically as a single pack

Datasheet: 2N1109 , 2N111 , 2N1110 , 2N1111 , 2N1111A , 2N1111B , 2N1114 , 2N1115 , BD140 , 2N1116 , 2N1117 , 2N1118 , 2N1118A , 2N1119 , 2N111A , 2N112 , 2N1120 .

History: 2N2368-51 | 2N1039-2 | 2SA1121B | 2N2512 | 2S56A | 2N2565-5 | BD14010STU

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