MP4356 Datasheet. Specs and Replacement

Type Designator: MP4356  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.35 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 30 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO236

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MP4356 datasheet

 9.1. Size:241K  m-mos

 mmp4357.pdf pdf_icon

MP4356

MMP4357 Package Data Sheet M-MOS Semiconductor Hong Kong Limited 30V P-Channel Enhancement-Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-5.3A =75m RDS(ON), Vgs@-4.5V, Ids@-4.2A =105m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance SOP-08 Internal Schematic Diagram Top View P-Channel MOSFET Maximum Ratings and Thermal Characteris... See More ⇒

 9.2. Size:230K  m-mos

 mmp4353.pdf pdf_icon

MP4356

MMP4353 Package Data Sheet M-MOS Semiconductor Hong Kong Limited 30 P-Channel Enhancement-Mode MOSFET VDS= -30V RDS(ON), Vgs@-4.5V, Ids@-4.0 = 75m RDS(ON), Vgs@-2.5V, Ids@-1.0A = 119m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance S0-8 Internal Schematic Diagram Top View P-Channel MOSFET Maximum Ratings and Thermal Characterist... See More ⇒

Detailed specifications: MP4280, MP4281, MP4282, MP4283, MP42A, MP42B, MP4354, MP4355, 2SD2499, MP4401, MP4403, MP4888, MP4889, MP4890, MP4916, MP4917, MP4964

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