All Transistors. MP4356 Datasheet

 

MP4356 Datasheet, Equivalent, Cross Reference Search

Type Designator: MP4356

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.35 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 125 °C

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 30 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO236

MP4356 Transistor Equivalent Substitute - Cross-Reference Search

 

MP4356 Datasheet (PDF)

5.1. mmp4357.pdf Size:241K _update_mosfet

MP4356
MP4356

MMP4357 Package Data Sheet M-MOS Semiconductor Hong Kong Limited 30V P-Channel Enhancement-Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-5.3A =75mΩ RDS(ON), Vgs@-4.5V, Ids@-4.2A =105mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance SOP-08 Internal Schematic Diagram Top View P-Channel MOSFET Maximum Ratings and Thermal Characteris

5.2. mmp4353.pdf Size:230K _update_mosfet

MP4356
MP4356

MMP4353 Package Data Sheet M-MOS Semiconductor Hong Kong Limited 30 P-Channel Enhancement-Mode MOSFET VDS= -30V RDS(ON), Vgs@-4.5V, Ids@-4.0 = 75mΩ RDS(ON), Vgs@-2.5V, Ids@-1.0A = 119mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance S0-8 Internal Schematic Diagram Top View P-Channel MOSFET Maximum Ratings and Thermal Characterist

Datasheet: D32P3 , D32P4 , D32S1 , D32S10 , D32S2 , D32S3 , D32S4 , D32S5 , 2N2222 , D32S7 , D32S8 , D32S9 , D32W10 , D32W11 , D32W12 , D32W13 , D32W14 .

 
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