2N1116 Specs and Replacement
Type Designator: 2N1116
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 5 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Collector Capacitance (Cc): 120 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO5
2N1116 Substitution
- BJT ⓘ Cross-Reference Search
2N1116 datasheet
August 2005 FDFM2N111 Integrated N-Channel PowerTrench MOSFET and Schottky Diode General Description Applications FDFM2N111 combines the exceptional performance of Standard Buck Converter Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a Features MicroFET package. This device is designed specifically as a single pack... See More ⇒
Detailed specifications: 2N111, 2N1110, 2N1111, 2N1111A, 2N1111B, 2N1114, 2N1115, 2N1115A, 2SA1943, 2N1117, 2N1118, 2N1118A, 2N1119, 2N111A, 2N112, 2N1120, 2N1121
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