2N1117 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N1117
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 5 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 4 MHz
Collector Capacitance (Cc): 100 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO5
2N1117 Transistor Equivalent Substitute - Cross-Reference Search
2N1117 Datasheet (PDF)
9.1. Size:286K fairchild semi
fdfm2n111.pdf
fdfm2n111.pdf
August 2005FDFM2N111Integrated N-Channel PowerTrench MOSFET and Schottky Diode General Description ApplicationsFDFM2N111 combines the exceptional performance of Standard Buck ConverterFairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a FeaturesMicroFET package. This device is designed specifically as a single pack
Datasheet: 2N1110 , 2N1111 , 2N1111A , 2N1111B , 2N1114 , 2N1115 , 2N1115A , 2N1116 , 13009 , 2N1118 , 2N1118A , 2N1119 , 2N111A , 2N112 , 2N1120 , 2N1121 , 2N1122 .
