MPS5132 Datasheet and Replacement
Type Designator: MPS5132
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 3.5 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO92
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MPS5132 Datasheet (PDF)
mps5179r.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPS5179/DHigh Frequency TransistorNPN SiliconMPS5179Motorola Preferred DeviceCOLLECTOR32BASE1EMITTER1MAXIMUM RATINGS23Rating Symbol Value UnitCASE 2904, STYLE 1CollectorEmitter Voltage VCEO 12 VdcTO92 (TO226AA)CollectorBase Voltage VCBO 20 VdcEmitterBase Voltage VEBO 2.5 Vdc
pn5179 mps5179 mmbt5179.pdf

MPS5179 MMBT5179 PN5179CEC TO-92 C TO-92B B ESOT-23E BMark: 3CNPN RF TransistorThis device is designed for use in low noise UHF/VHF amplifierswith collector currents in the 100 A to 30 mA range in commonemitter or common base mode of operation, and in low frequencydrift, high ouput UHF oscillators. Sourced from Process 40.Absolute Maximum Ratings* TA = 25C unless o
2n5172 2n6076 mps5172 mps6076.pdf

TMCentralSemiconductor Corp.145 Adams AvenueHauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824www.centralsemi.com
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: 2SC1262 | 2SA1483 | BC167 | ECG2360 | BDX85B | BU903 | SGSF321
Keywords - MPS5132 transistor datasheet
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History: 2SC1262 | 2SA1483 | BC167 | ECG2360 | BDX85B | BU903 | SGSF321



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