MPS6590 Datasheet and Replacement
   Type Designator: MPS6590
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.35
 W
   Maximum Collector-Base Voltage |Vcb|: 80
 V
   Maximum Collector-Emitter Voltage |Vce|: 80
 V
   Maximum Collector Current |Ic max|: 0.25
 A
   Max. Operating Junction Temperature (Tj): 150
 °C
   Transition Frequency (ft): 60
 MHz
   Collector Capacitance (Cc): 12
 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
		   Package: 
TO92
				
				  
				 
   - 
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MPS6590 Datasheet (PDF)
 9.1.  Size:173K  motorola
 mps650re.pdf 
						 
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPS650/DNPNAmplifier TransistorsMPS650*MPS651COLLECTOR COLLECTOR3 3 PNPMPS7502 2BASE BASE*MPS751NPN PNPVoltage and current are1 1negative for PNP transistorsEMITTER EMITTER*Motorola Preferred DevicesMAXIMUM RATINGSMPS650 MPS651MPS750 MPS751Rating Symbol UnitCollectorEmitter Voltage V
 9.2.  Size:279K  motorola
 mps6571r.pdf 
						 
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPS6571/DAmplifier TransistorNPN Silicon MPS6571COLLECTOR32BASE112EMITTER 3MAXIMUM RATINGSCASE 2904, STYLE 1TO92 (TO226AA)Rating Symbol Value UnitCollectorEmitter Voltage VCEO 20 VdcCollectorBase Voltage VCBO 25 VdcEmitterBase Voltage VEBO 3.0 VdcCollector Current  Continuous
 9.3.  Size:69K  motorola
 mps6560r.pdf 
						 
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPS6560/DAudio TransistorMPS6560NPN SiliconCOLLECTOR32BASE1213EMITTERCASE 2904, STYLE 1MAXIMUM RATINGSTO92 (TO226AA)Rating Symbol Value UnitCollectorEmitter Voltage VCEO 25 VdcCollectorBase Voltage VCBO 25 VdcEmitterBase Voltage VEBO 5.0 VdcCollector Current  Continuous I
 9.4.  Size:59K  motorola
 mps6507r.pdf 
						 
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPS6507/DAmplifier TransistorCOLLECTORMPS6507NPN Silicon32BASE1EMITTERMAXIMUM RATINGS1Rating Symbol Value Unit23CollectorEmitter Voltage VCEO 20 VdcCollectorBase Voltage VCBO 30 VdcCASE 2904, STYLE 1TO92 (TO226AA)EmitterBase Voltage VEBO 3.0 VdcCollector Current  Continuo
 9.5.  Size:304K  motorola
 mps6530r.pdf 
						 
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPS6530/DAmplifier TransistorMPS6530NPN SiliconCOLLECTOR32BASE1213EMITTERCASE 2904, STYLE 1MAXIMUM RATINGSTO92 (TO226AA)Rating Symbol Value UnitCollectorEmitter Voltage VCEO 40 VdcCollectorBase Voltage VCBO 60 VdcEmitterBase Voltage VEBO 5.0 VdcCollector Current  Continuo
 9.6.  Size:551K  motorola
 mps6521rev0.pdf 
						 
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPS6521/DCOLLECTOR 3Amplifier Transistors NPN2BASE*MPS6521 PNP1 EMITTERMPS6523COLLECTOR 3Voltage and current are negative for PNP transistors2BASE*Motorola Preferred Device1 EMITTERMAXIMUM RATINGSRating Symbol NPN PNP UnitCollectorEmitter Voltage VCEO VdcMPS6521 25 MPS6523  25C
 9.7.  Size:791K  motorola
 mps6520r.pdf 
						 
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPS6520/DCOLLECTOR 3Amplifier Transistors NPN2MPS6520BASE*MPS65211 EMITTER PNPMPS6523COLLECTOR 3Voltage and current are negative2 for PNP transistorsBASE*Motorola Preferred Device1 EMITTERMAXIMUM RATINGSRating Symbol NPN PNP UnitCollectorEmitter Voltage VCEO VdcMPS6520, MPS6521 25 
 9.8.  Size:103K  fairchild semi
 mmbt6515 mps6515.pdf 
						 
MPS6515/MMBT6515NPN General Purpose Amplifier3 This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100mA as a 2switch and to 100MHz as an amplifier.SOT-23TO-92 1Mark: 3J11. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* TC=25C unless otherwise notedSymbol Parameter Valu
 9.9.  Size:292K  fairchild semi
 mps6518.pdf 
						 
Discrete POWER & SignalTechnologiesMPS6518C TO-92BEPNP General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 100 mA. Sourcedfrom Process 66. See 2N3906 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 V
 9.10.  Size:293K  fairchild semi
 mps6562.pdf 
						 
Discrete POWER & SignalTechnologiesMPS6562C TO-92BEPNP General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 500 mA. Sourcedfrom Process 67. See TN4033A for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 25 V
 9.11.  Size:292K  fairchild semi
 mps6523.pdf 
						 
Discrete POWER & SignalTechnologiesMPS6523C TO-92BEPNP General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 300 mA. Sourcedfrom Process 68. See PN200 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 25 VV
 9.12.  Size:57K  fairchild semi
 mps651.pdf 
						 
MPS651Switching and Amplifier ApplicationsTO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage 80 VVCEO Collector-Emitter Voltage 60 VVEBO Emitter-Base Voltage 5 VIC Collector Current 0.8 APC Collector Dissipation 625 mWTJ Junction Temperat
 9.13.  Size:292K  fairchild semi
 mps6531.pdf 
						 
Discrete POWER & SignalTechnologiesMPS6531C TO-92BENPN General Purpose AmplifierThis device is designed for use as a medium power amplifierand switch requiring collector currents to 500 mA. Sourcedfrom Process 19. See PN2222A for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 VV C
 9.14.  Size:126K  fairchild semi
 mps6513.pdf 
						 
September 2007MPS6513NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100mA as a switch and to 100MHz as an amplifier.  Sourced from Proces 23. TO-9211. Emitter 2. Base 3. CollectorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Ba
 9.15.  Size:25K  fairchild semi
 mps6521.pdf 
						 
MPS6521NPN General Purpose Amplifier This device is deisgned for general purpose amplifier applications at collector to 300mA. Sourced from process 10.TO-9211. Emitter 2. Base 3. Collector Absolute Maximum Ratings Ta=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 25 VVCBO Collector-Base Voltage 40 VVEBO Emitter-Base Voltage 4
 9.16.  Size:47K  fairchild semi
 mps6514.pdf 
						 
MPS6514NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100mA as a switch and to 100MHz as an amplifier.TO-9211. Emitter 2. Base 3. CollectorAbsolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 25 VVCBO Collector-Base Vo
 9.17.  Size:292K  fairchild semi
 mps6534.pdf 
						 
Discrete POWER & SignalTechnologiesMPS6534C TO-92BEPNP General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 500 mA. Sourcedfrom Process 63. See PN2907A for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 V
 9.18.  Size:44K  central
 mps6520-mps6521.pdf 
						 
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110  Fax: (631) 435-1824
 9.20.  Size:111K  central
 mps651x series.pdf 
						 
DATA SHEETNPN PNPMPS6512 MPS6516MPS6513 MPS6517MPS6514 MPS6518 MPS6515 MPS6519COMPLEMENTARY SILICON TRANSISTORS JEDEC TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MPS6512 Series (NPN) and MPS6516 Series (PNP) types are molded Epoxy Silicon Small Signal Transistors designed for general-purpose amplifier applications. MAXIMUM RATINGS (TA=25C unless otherwise noted) 
 9.21.  Size:68K  onsemi
 mps650 mps651 mps750 mps751.pdf 
						 
NPN - MPS650, MPS651;PNP - MPS750, MPS751MPS651 and MPS751 are Preferred DevicesAmplifier TransistorsFeatures Pb-Free Packages are Available*http://onsemi.comCOLLECTOR3MAXIMUM RATINGS2Rating Symbol Value UnitBASECollector-Emitter Voltage VCE VdcCOLLECTORNPNMPS650; MPS750 403MPS651; MPS751 601EMITTERCollector-Base Voltage VCB Vdc2MPS650; MPS750 60
 9.22.  Size:43K  onsemi
 mps6560-d.pdf 
						 
MPS6560Audio TransistorNPN SiliconFeatures Pb-Free Package is Available*http://onsemi.comCOLLECTORMAXIMUM RATINGS3Rating Symbol Value UnitCollector -Emitter Voltage VCEO 25 Vdc2BASECollector -Base Voltage VCBO 25 VdcEmitter -Base Voltage VEBO 5.0 Vdc1Collector Current - Continuous IC 500 mAdcEMITTERTotal Device Dissipation @ TA = 25C PD 625 WDerate abo
 9.23.  Size:106K  onsemi
 mps651rlrmg.pdf 
						 
NPN - MPS650, MPS651;PNP - MPS750, MPS751Amplifier TransistorsFeatures These are Pb-Free Devices*http://onsemi.comCOLLECTOR3MAXIMUM RATINGS2Rating Symbol Value UnitBASECollector-Emitter Voltage VCE VdcCOLLECTORNPNMPS650; MPS750 403MPS651; MPS751 601EMITTERCollector-Base Voltage VCB Vdc2MPS650; MPS750 60BASEMPS651; MPS751 80PNPEmitter-Base V
 9.24.  Size:166K  onsemi
 mps6521 mps6523.pdf 
						 
MPS6521 (NPN)MPS6523 (PNP)MPS6521 is a Preferred DeviceAmplifier TransistorsFeatures Voltage and Current are Negative for PNP Transistorshttp://onsemi.com Pb-Free Packages are Available*COLLECTORCOLLECTORMAXIMUM RATINGS33Rating Symbol NPN PNP Unit22Collector -Emitter Voltage VCEO VdcBASEBASEMPS6521 25 -MPS6523 - 2511Collector -Base Voltage VCB
 9.25.  Size:106K  onsemi
 mps651g.pdf 
						 
NPN - MPS650, MPS651;PNP - MPS750, MPS751Amplifier TransistorsFeatures These are Pb-Free Devices*http://onsemi.comCOLLECTOR3MAXIMUM RATINGS2Rating Symbol Value UnitBASECollector-Emitter Voltage VCE VdcCOLLECTORNPNMPS650; MPS750 403MPS651; MPS751 601EMITTERCollector-Base Voltage VCB Vdc2MPS650; MPS750 60BASEMPS651; MPS751 80PNPEmitter-Base V
 9.26.  Size:217K  secos
 mps651.pdf 
						 
MPS651 0.625 W, 2 A, 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES G HSwitching and Amplifier Applications JA DCollector Millimeter REF. Min. Max. 2 BA 4.40 4.70 B 4.30 4.70 KC 12.70 - D 3.30 3.81 3 E 0.36 0.56 Base F 0.36 0.51 E C F
 9.27.  Size:250K  cdil
 mps6530 31.pdf 
						 
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTORS MPS6530MPS6531TO-92Plastic PackageCBEAMPLIFIER TRANSISTORABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITSVCEOCollector Emitter Voltage 40 VVCBOCollector Base Voltage 60 VVEBOEmitter Base Voltage 5 VICCollector Current Conti
 9.28.  Size:191K  cdil
 mps650 51 mps750 51.pdf 
						 
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN/PNP SILICON PLANAR AMPLIFIER TRANSISTORS MPS650 , MPS651 (NPN)MPS750 , MPS751 (PNP)TO -92CBEAMPLIFIER TRANSISTORSABSOLUTE MAXIMUM RATINGS.DESCRIPTION SYMBOL MPS650 MPS651 UNITSMPS750 MPS751Collector -Emitter Voltage VCEO 40 60 VCollector -Base Voltage VCBO 60 80 VEmitter -Base Vo
 9.29.  Size:349K  cdil
 mps6560-2.pdf 
						 
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILICON PLANAR EPITAXIAL TRANSISTORS MPS6560 NPNMPS6562 PNPTO-92Plastic PackageCBEAudioTransistorsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITSVCBOCollector Base Voltage 25 VVCEOCollector Emitter Voltage 25 VVEBOEmitter Base Voltage 5.0 VICCollector Current Con
 9.30.  Size:424K  jiangsu
 mps651.pdf 
						 
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate TransistorsTO  92 MPS651 TRANSISTOR (NPN)1.EMITTERFEATURES 2.BASE General Purpose Amplifier3.COLLECTOR       Equivalent Circuit MPS651=Device code  MPS651 Solid dot=Green molding compound device,      if none,the normal deviceXXX=Code                                              
 9.31.  Size:350K  kec
 mps651.pdf 
						 
SEMICONDUCTOR MPS651TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVOLTAGE REGULATOR, RELAY, LAMP DRIVER, INDUSTRIAL USEB CFEATURESHigh Voltage : VCEO=60V(Min.). High Current : IC(Max.)=1A.N DIM MILLIMETERSHigh Transition Frequency : fT=150MHz(Typ.).A 4.70 MAXEKB 4.80 MAXWide Area of Safe Operation. GC 3.70 MAXDComplementary to MPS751.D 0.45E 1.00F 1.27G
 9.37.  Size:159K  first silicon
 mps651.pdf 
						 
SEMICONDUCTORMPS651TECHNICAL DATAMPS651 TRANSISTOR (NPN) B CFEATURES  General Purpose Amplifier DIM MILLIMETERSA 4.70 MAXEB 4.80 MAXGC 3.70 MAXDD 0.55 MAXE 1.00F 1.27MAXIMUM RATINGS (Ta=25 unless otherwise noted) G 0.85H 0.45_HJ 14.00 + 0.50Symbol Parameter Value Unit L 2.30F FM 0.51 MAXVCBO Collector-Base Voltage 80 V VCEO Collector-Em
Datasheet: MPS6571
, MPS6572
, MPS6573
, MPS6574
, MPS6575
, MPS6576
, MPS6579
, MPS6580
, 2SC2922
, MPS6591
, MPS6595
, MPS6601
, MPS6602
, MPS6651
, MPS6652
, MPS6714
, MPS6715
. 
History: PBSS4350SPN
Keywords - MPS6590 transistor datasheet
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