2N48 Datasheet and Replacement

   Type Designator: 2N48
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.05 W
   Maximum Collector-Base Voltage |Vcb|: 35 V
   Maximum Collector Current |Ic max|: 0.02 A
   Max. Operating Junction Temperature (Tj): 50 °C
   Transition Frequency (ft): 0.8 MHz
   Forward Current Transfer Ratio (hFE), MIN: 39
   Noise Figure, dB: -
   Package: TO23

2N48 Substitution

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2N48 Datasheet (PDF)

0.1. Size:278K motorola
2n4856-59 2n4860-61.pdf pdf_icon

0.2. Size:51K vishay
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2N4856A/4857A/4858AVishay SiliconixN-Channel JFETsPRODUCT SUMMARYPart VGS(off) V(BR)GSS IDSS Min rDS(on) Max ID(off) Typ tON TypNumber (V) Min (V) (mA) (W) (pA) (ns)2N4856A 4 to 10 40 50 25 5 42N4857A 2 to 6 40 20 40 5 42N4858A 0.8 to 4 40 8 60 5 4FEATURES BENEFITS APPLICATIONSD Low On-Resistance: 2N4856A D Low Error Voltage D Analog Switches

0.3. Size:82K central
2n4856a 2n4857a 2n4858a 2n4859a 2n4860a 2n4861a.pdf pdf_icon

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

0.4. Size:67K central
2n4870 2n4871.pdf pdf_icon

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824145 Adams AvenueHauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824www.centralsemi.com

0.5. Size:68K central
2n4863.pdf pdf_icon

TMCentralSemiconductor Corp.145 Adams AvenueHauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824www.centralsemi.com

0.6. Size:180K mospec
2n4898-99 2n4900.pdf pdf_icon

AAAA

0.7. Size:241K optek
2n4854u.pdf pdf_icon

Product Bulletin JANTX, JANTXV, 2N4854USeptember 1996Surface Mount NPN/PNP Complementary TransistorsType JANTX, JANTXV, 2N4854U.058 (1.47)Features Absolute Maximum Ratings (TA = 25o C unless otherwise noted)NPN to PNP Isolation Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 VDCCeramic surface mount packageCollector-Base Voltage . . . . . .

0.8. Size:14K semelab
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2N4898X2N4899X2N4900XMECHANICAL DATADimensions in mm (inches)PNP EPITAXIAL BASEMEDIUM POWERTRANSISTOR6.35 (0.250)8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.3.86 (0.145)rad.APPLICATIONSMedium power, low frequency PNPbipolar transistor in a hermeticallysealed TO66 metal package.1.27 (0.050)1.91 (0.750)4.83 (0.190)5.33 (0.210)9.14 (0.360)min.

0.9. Size:11K semelab
2n4896.pdf pdf_icon

2N4896Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 60V dia.IC = 5A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3

0.10. Size:11K semelab
2n4895.pdf pdf_icon

2N4895Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 60V dia.IC = 5A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3

0.11. Size:10K semelab
2n4897x.pdf pdf_icon

2N4897XDimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 80V dia.IC = 5A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3

0.12. Size:14K semelab
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0.13. Size:11K semelab
2n4897.pdf pdf_icon

2N4897Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 80V dia.IC = 5A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3

0.14. Size:162K bocasemi
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Boca Semicondcutor Corp. BSChttp://www.bocasemi.comhttp://www.bocasemi.comhttp://www.bocasemi.comhttp://www.bocasemi.comhttp://www.bocasemi.com

0.15. Size:63K interfet
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Databook.fxp 1/14/99 12:00 PM Page B-1701/99 B-172N4867, 2N4867A, 2N4868, 2N4868A, 2N4869, 2N4869AN-Channel Silicon Junction Field-Effect TransistorAbsolute maximum ratings at TA = 25C Audio AmplifiersReverse Gate Source & Reverse Gate Drain Voltage 40 VGate Current 50 mAContinuous Device Power Dissipation 300mWPower Derating 1.7 mW/CStorage Temperature Range 6

0.16. Size:50K jmnic
2n4898 2n4899 2n4900.pdf pdf_icon

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N4898 2N4899 2N4900 DESCRIPTION With TO-66 package Low collector-emitter saturation voltage Excellent safe operating area 2N4900 complement to type 2N4912 APPLICATIONS Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFi

0.17. Size:43K microsemi
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TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL J-FET Equivalent To MIL-PRF-19500/385 DEVICES LEVELS MQ = JAN Equivalent 2N4856 2N4858 2N4860 MX = JANTX Equivalent 2N4857 2N4859 2N4861MV = JANTXV EquivalentABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted

0.18. Size:135K microsemi
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TECHNICAL DATANPN/PNP SILICON COMPLEMENTARY SMALL SIGNAL DUAL TRANSISTOR Qualified per MIL-PRF-19500/421 Devices Qualified LevelJAN 2N4854 2N3838 JANTX 2N4854U JANTXV MAXIMUM RATINGS Ratings Sym 2N3838(2) 2N4854, U Unit Collector-Emitter Voltage 40 40 VdcVCEO Collector-Base Voltage 60 60 VdcVCBO Emitter-Base Voltage 5.0 5.0 Vdc TO-78* VEBO 2N4854 Collector

0.19. Size:134K microsemi
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0.20. Size:130K inchange semiconductor
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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N4864 DESCRIPTION With TO-66 package Continuous collector current-IC=2A High VCEO:120V (Min) APPLICATIONS For use in general-purpose switching and linear amplifier applications PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol 3 Collector

0.21. Size:126K inchange semiconductor
2n4898 2n4899 2n4900.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N4898 2N4899 2N4900 DESCRIPTION With TO-66 package Low collector saturation voltage Excellent safe operating area 2N4900 complement to type 2N4912 APPLICATIONS Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplifi

Datasheet: 2N476 , 2N476A , 2N477 , 2N477A , 2N478 , 2N478A , 2N479 , 2N479A , 2N2222A , 2N480 , 2N480A , 2N481 , 2N482 , 2N483 , 2N484 , 2N485 , 2N4854 .