2N48
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N48
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.05
W
Tensión colector-base (Vcb): 35
V
Corriente del colector DC máxima (Ic): 0.02
A
Temperatura operativa máxima (Tj): 50
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 0.8
MHz
Ganancia de corriente contínua (hfe): 39
Paquete / Cubierta:
TO23
Búsqueda de reemplazo de transistor bipolar 2N48
2N48
Datasheet (PDF)
0.2. Size:51K vishay
2n4856a 2n4857a 2n4858a.pdf 
2N4856A/4857A/4858AVishay SiliconixN-Channel JFETsPRODUCT SUMMARYPart VGS(off) V(BR)GSS IDSS Min rDS(on) Max ID(off) Typ tON TypNumber (V) Min (V) (mA) (W) (pA) (ns)2N4856A 4 to 10 40 50 25 5 42N4857A 2 to 6 40 20 40 5 42N4858A 0.8 to 4 40 8 60 5 4FEATURES BENEFITS APPLICATIONSD Low On-Resistance: 2N4856A D Low Error Voltage D Analog Switches
0.4. Size:67K central
2n4870 2n4871.pdf
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824145 Adams AvenueHauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824www.centralsemi.com
0.5. Size:68K central
2n4863.pdf
TMCentralSemiconductor Corp.145 Adams AvenueHauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824www.centralsemi.com
0.7. Size:241K optek
2n4854u.pdf
Product Bulletin JANTX, JANTXV, 2N4854USeptember 1996Surface Mount NPN/PNP Complementary TransistorsType JANTX, JANTXV, 2N4854U.058 (1.47)Features Absolute Maximum Ratings (TA = 25o C unless otherwise noted)NPN to PNP Isolation Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 VDCCeramic surface mount packageCollector-Base Voltage . . . . . .
0.8. Size:14K semelab
2n4899x.pdf
2N4898X2N4899X2N4900XMECHANICAL DATADimensions in mm (inches)PNP EPITAXIAL BASEMEDIUM POWERTRANSISTOR6.35 (0.250)8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.3.86 (0.145)rad.APPLICATIONSMedium power, low frequency PNPbipolar transistor in a hermeticallysealed TO66 metal package.1.27 (0.050)1.91 (0.750)4.83 (0.190)5.33 (0.210)9.14 (0.360)min.
0.9. Size:11K semelab
2n4896.pdf
2N4896Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 60V dia.IC = 5A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3
0.10. Size:11K semelab
2n4895.pdf
2N4895Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 60V dia.IC = 5A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3
0.11. Size:10K semelab
2n4897x.pdf
2N4897XDimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 80V dia.IC = 5A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3
0.12. Size:14K semelab
2n4898x.pdf
2N4898X2N4899X2N4900XMECHANICAL DATADimensions in mm (inches)PNP EPITAXIAL BASEMEDIUM POWERTRANSISTOR6.35 (0.250)8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.3.86 (0.145)rad.APPLICATIONSMedium power, low frequency PNPbipolar transistor in a hermeticallysealed TO66 metal package.1.27 (0.050)1.91 (0.750)4.83 (0.190)5.33 (0.210)9.14 (0.360)min.
0.13. Size:11K semelab
2n4897.pdf
2N4897Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 80V dia.IC = 5A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3
0.14. Size:162K bocasemi
2n4870 2n4871.pdf
Boca Semicondcutor Corp. BSChttp://www.bocasemi.comhttp://www.bocasemi.comhttp://www.bocasemi.comhttp://www.bocasemi.comhttp://www.bocasemi.com
0.15. Size:63K interfet
2n4867-a 2n4868-a 2n4869-a.pdf
Databook.fxp 1/14/99 12:00 PM Page B-1701/99 B-172N4867, 2N4867A, 2N4868, 2N4868A, 2N4869, 2N4869AN-Channel Silicon Junction Field-Effect TransistorAbsolute maximum ratings at TA = 25C Audio AmplifiersReverse Gate Source & Reverse Gate Drain Voltage 40 VGate Current 50 mAContinuous Device Power Dissipation 300mWPower Derating 1.7 mW/CStorage Temperature Range 6
0.16. Size:50K jmnic
2n4898 2n4899 2n4900.pdf
Product Specification www.jmnic.com Silicon PNP Power Transistors 2N4898 2N4899 2N4900 DESCRIPTION With TO-66 package Low collector-emitter saturation voltage Excellent safe operating area 2N4900 complement to type 2N4912 APPLICATIONS Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFi
0.17. Size:43K microsemi
mx2n4856 mx2n4857 mx2n4858 mx2n4859 mx2n4860 mx2n4861.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL J-FET Equivalent To MIL-PRF-19500/385 DEVICES LEVELS MQ = JAN Equivalent 2N4856 2N4858 2N4860 MX = JANTX Equivalent 2N4857 2N4859 2N4861MV = JANTXV EquivalentABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted
0.18. Size:135K microsemi
2n3838 2n4854.pdf
TECHNICAL DATANPN/PNP SILICON COMPLEMENTARY SMALL SIGNAL DUAL TRANSISTOR Qualified per MIL-PRF-19500/421 Devices Qualified LevelJAN 2N4854 2N3838 JANTX 2N4854U JANTXV MAXIMUM RATINGS Ratings Sym 2N3838(2) 2N4854, U Unit Collector-Emitter Voltage 40 40 VdcVCEO Collector-Base Voltage 60 60 VdcVCBO Emitter-Base Voltage 5.0 5.0 Vdc TO-78* VEBO 2N4854 Collector
0.19. Size:134K microsemi
2n4854u.pdf
TECHNICAL DATANPN/PNP SILICON COMPLEMENTARY SMALL SIGNAL DUAL TRANSISTOR Qualified per MIL-PRF-19500/421 Devices Qualified LevelJAN 2N4854 2N3838 JANTX 2N4854U JANTXV MAXIMUM RATINGS Ratings Sym 2N3838(2) 2N4854, U Unit Collector-Emitter Voltage 40 40 VdcVCEO Collector-Base Voltage 60 60 VdcVCBO Emitter-Base Voltage 5.0 5.0 Vdc TO-78* VEBO 2N4854 Collector
0.20. Size:130K inchange semiconductor
2n4864.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N4864 DESCRIPTION With TO-66 package Continuous collector current-IC=2A High VCEO:120V (Min) APPLICATIONS For use in general-purpose switching and linear amplifier applications PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol 3 Collector
0.21. Size:126K inchange semiconductor
2n4898 2n4899 2n4900.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N4898 2N4899 2N4900 DESCRIPTION With TO-66 package Low collector saturation voltage Excellent safe operating area 2N4900 complement to type 2N4912 APPLICATIONS Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplifi
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