2N48 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N48 📄📄
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.05 W
Tensión colector-base (Vcb): 35 V
Corriente del colector DC máxima (Ic): 0.02 A
Temperatura operativa máxima (Tj): 50 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 0.8 MHz
Ganancia de corriente contínua (hFE): 39
Encapsulados: TO23
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2N48 datasheet
0.2. Size:51K vishay
2n4856a 2n4857a 2n4858a.pdf 
2N4856A/4857A/4858A Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part VGS(off) V(BR)GSS IDSS Min rDS(on) Max ID(off) Typ tON Typ Number (V) Min (V) (mA) (W) (pA) (ns) 2N4856A 4 to 10 40 50 25 5 4 2N4857A 2 to 6 40 20 40 5 4 2N4858A 0.8 to 4 40 8 60 5 4 FEATURES BENEFITS APPLICATIONS D Low On-Resistance 2N4856A D Low Error Voltage D Analog Switches
0.4. Size:67K central
2n4870 2n4871.pdf
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 145 Adams Avenue Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 www.centralsemi.com
0.5. Size:68K central
2n4863.pdf
TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 www.centralsemi.com
0.7. Size:241K optek
2n4854u.pdf
Product Bulletin JANTX, JANTXV, 2N4854U September 1996 Surface Mount NPN/PNP Complementary Transistors Type JANTX, JANTXV, 2N4854U .058 (1.47) Features Absolute Maximum Ratings (TA = 25o C unless otherwise noted) NPN to PNP Isolation Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 VDC Ceramic surface mount package Collector-Base Voltage . . . . . .
0.8. Size:14K semelab
2n4899x.pdf
2N4898X 2N4899X 2N4900X MECHANICAL DATA Dimensions in mm (inches) PNP EPITAXIAL BASE MEDIUM POWER TRANSISTOR 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 3.86 (0.145) rad. APPLICATIONS Medium power, low frequency PNP bipolar transistor in a hermetically sealed TO 66 metal package. 1.27 (0.050) 1.91 (0.750) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min.
0.9. Size:11K semelab
2n4896.pdf
2N4896 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 60V dia. IC = 5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3
0.10. Size:11K semelab
2n4895.pdf
2N4895 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 60V dia. IC = 5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3
0.11. Size:10K semelab
2n4897x.pdf
2N4897X Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 80V dia. IC = 5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3
0.12. Size:14K semelab
2n4898x.pdf
2N4898X 2N4899X 2N4900X MECHANICAL DATA Dimensions in mm (inches) PNP EPITAXIAL BASE MEDIUM POWER TRANSISTOR 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 3.86 (0.145) rad. APPLICATIONS Medium power, low frequency PNP bipolar transistor in a hermetically sealed TO 66 metal package. 1.27 (0.050) 1.91 (0.750) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min.
0.13. Size:11K semelab
2n4897.pdf
2N4897 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 80V dia. IC = 5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3
0.14. Size:162K bocasemi
2n4870 2n4871.pdf
Boca Semicondcutor Corp. BSC http //www.bocasemi.com http //www.bocasemi.com http //www.bocasemi.com http //www.bocasemi.com http //www.bocasemi.com
0.15. Size:63K interfet
2n4867-a 2n4868-a 2n4869-a.pdf
Databook.fxp 1/14/99 12 00 PM Page B-17 01/99 B-17 2N4867, 2N4867A, 2N4868, 2N4868A, 2N4869, 2N4869A N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25 C Audio Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage 40 V Gate Current 50 mA Continuous Device Power Dissipation 300mW Power Derating 1.7 mW/ C Storage Temperature Range 6
0.16. Size:50K jmnic
2n4898 2n4899 2n4900.pdf
Product Specification www.jmnic.com Silicon PNP Power Transistors 2N4898 2N4899 2N4900 DESCRIPTION With TO-66 package Low collector-emitter saturation voltage Excellent safe operating area 2N4900 complement to type 2N4912 APPLICATIONS Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fi
0.17. Size:43K microsemi
mx2n4856 mx2n4857 mx2n4858 mx2n4859 mx2n4860 mx2n4861.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com N-CHANNEL J-FET Equivalent To MIL-PRF-19500/385 DEVICES LEVELS MQ = JAN Equivalent 2N4856 2N4858 2N4860 MX = JANTX Equivalent 2N4857 2N4859 2N4861 MV = JANTXV Equivalent ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted
0.18. Size:135K microsemi
2n3838 2n4854.pdf
TECHNICAL DATA NPN/PNP SILICON COMPLEMENTARY SMALL SIGNAL DUAL TRANSISTOR Qualified per MIL-PRF-19500/421 Devices Qualified Level JAN 2N4854 2N3838 JANTX 2N4854U JANTXV MAXIMUM RATINGS Ratings Sym 2N3838(2) 2N4854, U Unit Collector-Emitter Voltage 40 40 Vdc VCEO Collector-Base Voltage 60 60 Vdc VCBO Emitter-Base Voltage 5.0 5.0 Vdc TO-78* VEBO 2N4854 Collector
0.19. Size:134K microsemi
2n4854u.pdf
TECHNICAL DATA NPN/PNP SILICON COMPLEMENTARY SMALL SIGNAL DUAL TRANSISTOR Qualified per MIL-PRF-19500/421 Devices Qualified Level JAN 2N4854 2N3838 JANTX 2N4854U JANTXV MAXIMUM RATINGS Ratings Sym 2N3838(2) 2N4854, U Unit Collector-Emitter Voltage 40 40 Vdc VCEO Collector-Base Voltage 60 60 Vdc VCBO Emitter-Base Voltage 5.0 5.0 Vdc TO-78* VEBO 2N4854 Collector
0.20. Size:130K inchange semiconductor
2n4864.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N4864 DESCRIPTION With TO-66 package Continuous collector current-IC=2A High VCEO 120V (Min) APPLICATIONS For use in general-purpose switching and linear amplifier applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector
0.21. Size:126K inchange semiconductor
2n4898 2n4899 2n4900.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N4898 2N4899 2N4900 DESCRIPTION With TO-66 package Low collector saturation voltage Excellent safe operating area 2N4900 complement to type 2N4912 APPLICATIONS Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplifi
Otros transistores... 2N476, 2N476A, 2N477, 2N477A, 2N478, 2N478A, 2N479, 2N479A, 2N2222A, 2N480, 2N480A, 2N481, 2N482, 2N483, 2N484, 2N485, 2N4854
