2N48 Todos los transistores

 

2N48 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N48

Material: Ge

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.05 W

Tensión colector-base (Vcb): 35 V

Corriente del colector DC máxima (Ic): 0.02 A

Temperatura operativa máxima (Tj): 50 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 0.8 MHz

Ganancia de corriente contínua (hfe): 39

Empaquetado / Estuche: TO23

Búsqueda de reemplazo de transistor bipolar 2N48

 

2N48 Datasheet (PDF)

1.1. 2n4856-59 2n4860-61.pdf Size:278K _motorola

2N48
2N48

1.2. 2n4856a 2n4857a 2n4858a.pdf Size:51K _vishay

2N48
2N48

2N4856A/4857A/4858A Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part VGS(off) V(BR)GSS IDSS Min rDS(on) Max ID(off) Typ tON Typ Number (V) Min (V) (mA) (W) (pA) (ns) 2N4856A –4 to –10 –40 50 25 5 4 2N4857A –2 to –6 –40 20 40 5 4 2N4858A –0.8 to –4 –40 8 60 5 4 FEATURES BENEFITS APPLICATIONS D Low On-Resistance: 2N4856A D Low Error Voltage D Analog Switches <25

 1.3. 2n4856a 2n4857a 2n4858a 2n4859a 2n4860a 2n4861a.pdf Size:82K _central

2N48

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

1.4. 2n4863.pdf Size:68K _central

2N48

TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.centralsemi.com

 1.5. 2n4870 2n4871.pdf Size:67K _central

2N48
2N48

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.centralsemi.com

1.6. 2n4898-99 2n4900.pdf Size:180K _mospec

2N48
2N48

A A A A

1.7. 2n4854u.pdf Size:241K _optek

2N48
2N48

Product Bulletin JANTX, JANTXV, 2N4854U September 1996 Surface Mount NPN/PNP Complementary Transistors Type JANTX, JANTXV, 2N4854U .058 (1.47) Features Absolute Maximum Ratings (TA = 25o C unless otherwise noted) NPN to PNP Isolation Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 VDC •Ceramic surface mount package Collector-Base Voltage . . . . . .

1.8. 2n4899x.pdf Size:14K _semelab

2N48
2N48

2N4898X 2N4899X 2N4900X MECHANICAL DATA Dimensions in mm (inches) PNP EPITAXIAL BASE MEDIUM POWER TRANSISTOR 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 3.86 (0.145) rad. APPLICATIONS Medium power, low frequency PNP bipolar transistor in a hermetically sealed TO–66 metal package. 1.27 (0.050) 1.91 (0.750) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min.

1.9. 2n4895.pdf Size:11K _semelab

2N48

2N4895 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 60V dia. IC = 5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3

1.10. 2n4896.pdf Size:11K _semelab

2N48

2N4896 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 60V dia. IC = 5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3

1.11. 2n4898x.pdf Size:14K _semelab

2N48
2N48

2N4898X 2N4899X 2N4900X MECHANICAL DATA Dimensions in mm (inches) PNP EPITAXIAL BASE MEDIUM POWER TRANSISTOR 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 3.86 (0.145) rad. APPLICATIONS Medium power, low frequency PNP bipolar transistor in a hermetically sealed TO–66 metal package. 1.27 (0.050) 1.91 (0.750) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min.

1.12. 2n4897.pdf Size:11K _semelab

2N48

2N4897 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 80V dia. IC = 5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3

1.13. 2n4897x.pdf Size:10K _semelab

2N48

2N4897X Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 80V dia. IC = 5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3

1.14. 2n4870 2n4871.pdf Size:162K _bocasemi

2N48
2N48

Boca Semicondcutor Corp. BSC http://www.bocasemi.com http://www.bocasemi.com http://www.bocasemi.com http://www.bocasemi.com http://www.bocasemi.com

1.15. 2n4867-a 2n4868-a 2n4869-a.pdf Size:63K _interfet

2N48

Databook.fxp 1/14/99 12:00 PM Page B-17 01/99 B-17 2N4867, 2N4867A, 2N4868, 2N4868A, 2N4869, 2N4869A N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Audio Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage – 40 V Gate Current 50 mA Continuous Device Power Dissipation 300mW Power Derating 1.7 mW/°C Storage Temperature Range – 6

1.16. 2n4898 2n4899 2n4900.pdf Size:50K _jmnic

2N48
2N48

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N4898 2N4899 2N4900 DESCRIPTION · ·With TO-66 package ·Low collector-emitter saturation voltage ·Excellent safe operating area ·2N4900 complement to type 2N4912 APPLICATIONS ·Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fi

1.17. mx2n4856 mx2n4857 mx2n4858 mx2n4859 mx2n4860 mx2n4861.pdf Size:43K _microsemi

2N48
2N48

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL J-FET Equivalent To MIL-PRF-19500/385 DEVICES LEVELS MQ = JAN Equivalent 2N4856 2N4858 2N4860 MX = JANTX Equivalent 2N4857 2N4859 2N4861 MV = JANTXV Equivalent ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted

1.18. 2n3838 2n4854.pdf Size:135K _microsemi

2N48
2N48

TECHNICAL DATA NPN/PNP SILICON COMPLEMENTARY SMALL SIGNAL DUAL TRANSISTOR Qualified per MIL-PRF-19500/421 Devices Qualified Level JAN 2N4854 2N3838 JANTX 2N4854U JANTXV MAXIMUM RATINGS Ratings Sym 2N3838(2) 2N4854, U Unit Collector-Emitter Voltage 40 40 Vdc VCEO Collector-Base Voltage 60 60 Vdc VCBO Emitter-Base Voltage 5.0 5.0 Vdc TO-78* VEBO 2N4854 Collector

1.19. 2n4854u.pdf Size:134K _microsemi

2N48
2N48

TECHNICAL DATA NPN/PNP SILICON COMPLEMENTARY SMALL SIGNAL DUAL TRANSISTOR Qualified per MIL-PRF-19500/421 Devices Qualified Level JAN 2N4854 2N3838 JANTX 2N4854U JANTXV MAXIMUM RATINGS Ratings Sym 2N3838(2) 2N4854, U Unit Collector-Emitter Voltage 40 40 Vdc VCEO Collector-Base Voltage 60 60 Vdc VCBO Emitter-Base Voltage 5.0 5.0 Vdc TO-78* VEBO 2N4854 Collector

1.20. 2n4898 2n4899 2n4900.pdf Size:126K _inchange_semiconductor

2N48
2N48

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N4898 2N4899 2N4900 DESCRIPTION · ·With TO-66 package ·Low collector saturation voltage ·Excellent safe operating area ·2N4900 complement to type 2N4912 APPLICATIONS ·Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplifi

1.21. 2n4864.pdf Size:130K _inchange_semiconductor

2N48
2N48

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N4864 DESCRIPTION ·With TO-66 package ·Continuous collector current-IC=2A ·High VCEO:120V (Min) APPLICATIONS ·For use in general-purpose switching and linear amplifier applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector

Otros transistores... 2N476 , 2N476A , 2N477 , 2N477A , 2N478 , 2N478A , 2N479 , 2N479A , 2N4401 , 2N480 , 2N480A , 2N481 , 2N482 , 2N483 , 2N484 , 2N485 , 2N4854 .

 

 
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