MPS901 Specs and Replacement
Type Designator: MPS901
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 4500 MHz
Collector Capacitance (Cc): 1 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO92
MPS901 Substitution
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MPS901 datasheet
mmbr901lt1 mps901 mrf901 mrf9011lt1.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBR901LT1/D The RF Line MMBR901LT1, T3 NPN Silicon MPS901 MRF901 High-Frequency Transistor MRF9011LT1 Designed primarily for use in high gain, low noise small signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching times. High Current Gain Bandwidth Product IC ... See More ⇒
Detailed specifications: MPS8093, MPS8097, MPS8098, MPS8099, MPS834, MPS835, MPS8598, MPS8599, TIP42C, MPS911, MPS918, MPS918R, MPS929, MPS929A, MPS930, MPS930A, MPS930R
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