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MPSH10 Specs and Replacement

Type Designator: MPSH10

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.625 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 650 MHz

Collector Capacitance (Cc): 0.7 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO92

 MPSH10 Substitution

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MPSH10 datasheet

 ..1. Size:78K  motorola

mpsh10 mpsh11.pdf pdf_icon

MPSH10

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPSH10/D VHF/UHF Transistors MPSH10 NPN Silicon MPSH11 COLLECTOR 3 Motorola Preferred Devices 1 BASE 2 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol Value Unit CASE 29 04, STYLE 2 Collector Emitter Voltage VCEO 25 Vdc TO 92 (TO 226AA) Collector Base Voltage VCBO 30 Vdc Emitter Base Voltage VEBO 3.0 Vd... See More ⇒

 ..2. Size:738K  fairchild semi

mmbth10 mpsh10.pdf pdf_icon

MPSH10

MPSH10 MMBTH10 C E C TO-92 E B B SOT-23 Mark 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 A to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42. Absolute Maximum Ratings* TA = 25 C unless otherwise noted S... See More ⇒

 ..3. Size:22K  diodes

mpsh10.pdf pdf_icon

MPSH10

NPN SILICON PLANAR MPSH10 RF TRANSISTOR ISSUE 3 NOVEMBER 94 T i T i i i T TO92 ABSOLUTE MAXIMUM RATINGS. T V IT II i V I V V II i V I V V i V I V V i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C) T I T IT DITI II V V I I V I II i V V I I V I i V V I I V I II I V V I i I V V I II i V V I I i ... See More ⇒

 ..4. Size:82K  onsemi

mpsh10.pdf pdf_icon

MPSH10

MPSH10 Preferred Device VHF/UHF Transistors NPN Silicon Features Pb-Free Packages are Available* http //onsemi.com COLLECTOR MAXIMUM RATINGS 3 Rating Symbol Value Unit 1 Collector-Emitter Voltage VCEO 25 Vdc BASE Collector-Base Voltage VCBO 30 Vdc Emitter-Base Voltage VEBO 3.0 Vdc 2 EMITTER Total Device Dissipation @ TA = 25 C PD 350 W Derate above 25 C 2.8 mW/ C Tota... See More ⇒

Detailed specifications: MPSD55 , MPSD56 , MPSDO6 , MPSH02 , MPSH04 , MPSH05 , MPSH07 , MPSH08 , TIP142 , MPSH11 , MPSH17 , MPSH19 , MPSH20 , MPSH24 , MPSH30 , MPSH31 , MPSH32 .

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