All Transistors. MPSH33 Datasheet

 

MPSH33 Datasheet, Equivalent, Cross Reference Search


   Type Designator: MPSH33
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 500 MHz
   Collector Capacitance (Cc): 0.3 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO92

 MPSH33 Transistor Equivalent Substitute - Cross-Reference Search

   

MPSH33 Datasheet (PDF)

 9.1. Size:26K  fairchild semi
 mpsh34.pdf

MPSH33 MPSH33

MPSH34NPN General Purpose Amplifier This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100mA to 20mA range to 300MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving FET mixers.TO-92 Sourced from process 47.1 See MPSH11 for characteristics.1. Bas

 9.2. Size:33K  no
 mpsh19 mpsh20 mpsh30 mpsh31 mpsh32 mpsh37.pdf

MPSH33

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Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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