All Transistors. MPSH33 Datasheet

 

MPSH33 Datasheet and Replacement


   Type Designator: MPSH33
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 500 MHz
   Collector Capacitance (Cc): 0.3 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO92
 

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MPSH33 Datasheet (PDF)

 9.1. Size:26K  fairchild semi
 mpsh34.pdf pdf_icon

MPSH33

MPSH34NPN General Purpose Amplifier This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100mA to 20mA range to 300MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving FET mixers.TO-92 Sourced from process 47.1 See MPSH11 for characteristics.1. Bas

 9.2. Size:33K  no
 mpsh19 mpsh20 mpsh30 mpsh31 mpsh32 mpsh37.pdf pdf_icon

MPSH33

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Datasheet: MPSH11 , MPSH17 , MPSH19 , MPSH20 , MPSH24 , MPSH30 , MPSH31 , MPSH32 , BD136 , MPSH34 , MPSH37 , MPSH54 , MPSH55 , MPSH81 , MPSH83 , MPSH85 , MPSL01 .

History: 2SB828S

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