MPSL01B Specs and Replacement
Type Designator: MPSL01B
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 170 V
Maximum Collector-Emitter Voltage |Vce|: 170 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 60 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO92
MPSL01B Substitution
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MPSL01B datasheet
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPSL01/D Amplifier Transistor NPN Silicon MPSL01 COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit CASE 29 04, STYLE 1 TO 92 (TO 226AA) Collector Emitter Voltage VCEO 120 Vdc Collector Base Voltage VCBO 140 Vdc Emitter Base Voltage VEBO 5.0 Vdc Collector Current Continuo... See More ⇒
Discrete POWER & Signal Technologies MPSL01 C TO-92 B E NPN General Purpose Amplifier This device is designed for general purpose, high voltage amplifiers and gas discharge display driving. Sourced from Process 16. See 2N5551 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 120 V V Collector... See More ⇒
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR MPSL01 TO-92 CBE C B E Amplifier Transistor. ABSOLUTE MAXIMUM RATINGS. DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 140 V Collector -Emitter Voltage VCEO 120 V Emitter -Base Voltage VEBO 5.0 V Collector Current Continuous IC 150 mA Power... See More ⇒
Detailed specifications: MPSH37, MPSH54, MPSH55, MPSH81, MPSH83, MPSH85, MPSL01, MPSL01A, TIP41C, MPSL07, MPSL08, MPSL51, MPSM83, MPSU01, MPSU01A, MPSU02, MPSU03
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